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Repair of Porous Methylsilsesquioxane Films using SupercriticalCarbon Dioxide

Published online by Cambridge University Press:  17 March 2011

Bo Xie  and
Anthony J. Muscat
Bo Xie
Affiliation:
Department of Chemical & Environmental Engineering University of Arizona, Tucson, AZ 85721, U.S.A
Anthony J. Muscat
Affiliation:
email:, [email protected]
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Abstract

Porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) were treated withalkyldimethylmonochlorosilanes having chain lengths of one, four, and eightcarbon atoms dissolved in supercritical carbon dioxide at 150-300 atm and50-60°C to repair oxygen ashing damage. Fourier transform infrared (FTIR)spectroscopy showed that trimethylchlorosilane (TMCS),butyldimethylchlorosilane (BDMCS), and octyldimethylchlorosilane (ODMCS)reacted with silanol groups on the surfaces of the pores producing covalentSi-O-Si bonds. Selfcondensation between alkylsilanols produced a residue onthe surface, which was partially removed using a pure scCO2rinse. The hydrophobicity of the blanket p-MSQ surface was recovered aftersilylation treatment as shown by contact angles >85°. The initialdielectric constant of 2.4 ± 0.1 increased to 3.5 ± 0.1 after oxygen plasmaashing and was reduced to 2.6 ± 0.1 by TMCS, 2.8 ± 0.1 by BDMCS, and 3.2 byODMCS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F1.4
Copyright
Copyright © Materials Research Society 2004

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