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Remote Plasma Enhanced Chemical Vapor Deposition of TiOx Films from Titanium Tetraisopropoxide

Published online by Cambridge University Press:  21 March 2011

Masatoshi Nakamura ,
Shinichi Kato ,
Toru Aoki  and
Yoshinori Hatanaka
Masatoshi Nakamura
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University
Shinichi Kato
Affiliation:
Research Institute of Electronics, Shizuoka University3-5-1 Johoku, Hamamatsu, 432-8011, Japan
Toru Aoki
Affiliation:
Research Institute of Electronics, Shizuoka University3-5-1 Johoku, Hamamatsu, 432-8011, Japan
Yoshinori Hatanaka
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University Research Institute of Electronics, Shizuoka University3-5-1 Johoku, Hamamatsu, 432-8011, Japan
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Abstract

TiOx thin films were prepared from titanium tetraisopropoxide (Ti-(O-i-C3H7)4, TTIP) in a remote plasma enhanced chemical vapor deposition (RPE-CVD) using a mixture of hydrogen/oxygen plasma gas. Emission spectra suggested that H-radicals dissociated TTIP molecules in gas phase. By mixing with oxygen, H-radical density was increased with the correlation effect to result in enhancement of deposition rate. Deposition rate was also influenced by OH-radicals. OH-radicals caused deactivation of precursors and hence suppressed Ti-O-Ti bond formation in gas phase. The highest deposition rate of 11 nm/min, which was two orders higher than that for the case of single gas plasma, was achieved in the case of mixture gas ratio of 20% oxygen and 80% hydrogen. Surface reaction due to the heated substrate did not affect the deposition rate though the film structure was remarkably changed. It was demonstrated that for RPE-CVD process, oxygen/hydrogen mixture gas plasma was effective for obtaining high deposition rate, and also H-to-OH radical density ratio was an important factor to control the deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O8.24
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Jayatissa, A. H., Yamaguchi, T., Nakanishi, Y., Ishikawa, K. and Hatanaka, Y., Appl. Surf. Sci., 113/114, 462 (1997).Google Scholar
2. Aoki, T., Ogishima, T., Nakanishi, Y. and Hatanaka, Y., Electrochem. Soc. Proc., 97–25, 1207 (1997).Google Scholar
3. Kim, Y. J. and Kim, H. J., Materials Letters, 21, 351 (1994).Google Scholar
4. Xu, Y. Y., Muramatsu, T. and Hatanaka, Y., Mat. Res. Soc. Proc., 544, 185 (1999).Google Scholar
5. Amor, S. B., Baud, G., Besse, J. P. and Jacquet, M., Thin Solid Films, 293, 163 (1997).Google Scholar
6. Szczyrbowski, J., Braeuer, G., Teschner, G. and Zmelty, A., Journal of Non-Crystalline Solids, 218, 25 (1997).Google Scholar
7. Lee, W. G., Woo, S. I., Kim, J. C., Choi, S. H. and Oh, K. H., Thin Solid Films, 237, 105 (1994).Google Scholar
8. Nakamura, M., Korzec, D., Aoki, T., Engemann, J., and Hatanaka, Y., J. Mater. Res., 16, 621 (2001).Google Scholar
9. Itikawa, Y., Ichimura, A., Onda, K., Sakimoto, K., Takayanagi, K., Hatano, Y., Hayashi, M., Nishimura, H. and Tsurubuchi, S., J. Phys. Chem. Ref. Data., 18 (1), pp. 23–42 (1989).Google Scholar
10. Tawara, H., Itikawa, T., Nishimura, H. and Yoshino, M., J. Phys. Chem. Ref. Data., 19 (3), pp. 617–633 (1990).Google Scholar