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Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

Published online by Cambridge University Press:  25 February 2011

R. K. Singh ,
D. Gilbert ,
R. Tellshow ,
R. Koba ,
R. Ochoa ,
J. H. Simmons ,
P. H. Holloway ,
J. Rodgers  and
K. Buckle
R. K. Singh
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
D. Gilbert
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R. Tellshow
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R. Koba
Affiliation:
Plasma-Therm I.P.Inc, St. Petersburg, FL
R. Ochoa
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
J. H. Simmons
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
P. H. Holloway
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
J. Rodgers
Affiliation:
University of South Florida, Department of Electrical Engineering, Tampa, FL
K. Buckle
Affiliation:
University of South Florida, Department of Electrical Engineering, Tampa, FL
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Abstract

We have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 31
Copyright
Copyright © Materials Research Society 1992

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References

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