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Rem and Tem Studies of Thin Film Growth Dynamics on si Surfaces

Published online by Cambridge University Press:  15 February 2011

Hiroki Minoda ,
Yasumasa Tanishiro  and
Katsumichi Yagi
Hiroki Minoda
Affiliation:
Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan.
Yasumasa Tanishiro
Affiliation:
Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan.
Katsumichi Yagi
Affiliation:
Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan.
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Abstrac

A study of surfactant-mediated epitaxy of Ge on Si(111) surfaces was carried out by in-situ transmission electron microscopy (TEM) and reflection electron microscopy (REM). Formation of 3D islands on the Si(111)-In surfaces was suppressed because of a change of critical nucleation size of the 3D islands. It was also found that formation of misfit dislocations at the interface between Si and Ge films was promoted by predeposition of In.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 404: Symposium J – In Situ Electron and Tunneling Microscopy of Dynamic Processes , 1995 , 131
Copyright
Copyright © Materials Research Society 1996

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