Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:01:36.016Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliable Impurity Identification in Inp

Published online by Cambridge University Press:  22 February 2011

M. L. Schnoes ,
T. D. Harris ,
S. J. Pearton ,
M. A. Di Giuseppe ,
R. Bhat  and
H. M. Cox
M. L. Schnoes
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
T. D. Harris
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
M. A. Di Giuseppe
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Bhat
Affiliation:
Bell Communications Research, Red Bank, NJ 07701
H. M. Cox
Affiliation:
Bell Communications Research, Red Bank, NJ 07701
Get access

Abstract

Low temperature, resonantly excited photoluminescence (PL) has proven to be the method of choice for impurity identification in GaAs. InP has suffered from insufficient impurity binding energy data to benefit similarly. We will report results of selectively-excited donor-acceptor pair spectroscopy for acceptor identification in InP. Ion implantation doping of high purity InP is used for generation of known impurity samples. Progress toward a complete database of acceptor binding energies in InP is reported. We will discuss the results of high magnetic field low temperature resonant photoluminescence spectroscopy for donor identification in InP. The success of donor ion implantation studies will be included. This data should provide direction for efforts in growing high purity InP by MOCVD and gas source MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 113
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dean, P.J., Robbins, D.J., and Bishop, S.G., J. Phys. C 12, 5567 (1979).Google Scholar
2. Williams, E.W., Elder, W., Astles, M.G., Webb, M., Mullin, J.B., Straughan, B., and Tufton, P.J., J. .Electrochemical Society, 120, 1741 (1973).Google Scholar
3. Pomrenke, Gernot S., Park, Y.S., and Hengehold, Robert L., J. Appl. Phys. 52, 969 (1981).CrossRefGoogle Scholar
4. White, A.M., Dean, P.J., Fairhurst, K.M., Bardsley, W., Williams, E.W. and Day, B., Solid State Comm. 11, 1099 (1972).Google Scholar
5. Oberstar, J.D., Streetman, B.G., J. Appl. Phys. 53, 5154 (1982).Google Scholar
6. Skromme, B.J., Stillman, G.E., Oberstar, J.S., Chan, S.S., Appl. Phys. Lett. 44, 319 (1984).CrossRefGoogle Scholar
7. Kubota, Eishi, Ohmore, Yutaka, and Sugii, Kiyomasa, J. Appl. Phys. 55, 3779 (1984).Google Scholar
8. Swaminathan, V., Donnelly, V.M., and Long, J., J. Appl. Phys. 58, 4565 (1985).Google Scholar
9. Dean, P.J., Robbins, D.J., and Bishop, S.G., Solid State Comm. 32, 379 (1979).Google Scholar
10. Barthruff, D., and Haspeklo, H., J. of Lumin. 24/25, 181 (1981).Google Scholar
11. Beye, A.C., Yamada, A., Kamijoh, T., Tanoue, H., Mayer, K.M., Ohnishi, N., Shibata, H., and Makita, Y., Appl. Phys. Lett. 56, 349 (1990).CrossRefGoogle Scholar
12. Baldereschi, A. and Lipari, Nunzio O., Phys. Rev. B, 8, 2697 (1973).CrossRefGoogle Scholar
13. Balderesch, A., and Lipari, Nunzio O., Phys. Rev. B, 9, 1525 (1974).CrossRefGoogle Scholar
14. Yu, P.W., Liang, B.W. and Tu, C.W., Appl. Phys. Lett, 61, 2443 (1992).CrossRefGoogle Scholar
15. Dreszer, P., Chen, W.M., Seendripu, K.et al, Phys. Rev. B, 47, 4111 (1993).CrossRefGoogle Scholar
16. Skolnick, M.S. and Dean, P.J., J. Phys C., 15, 5863 (1982).CrossRefGoogle Scholar
17. Armistead, C.J., Davidson, A.M., Knowles, P.etal, 1983 Proc. Int. Conf. on Appl. of High Magnetic Fields in Semiconductor Physics, Lecture Notes in Physics (Springer, Berlin, 1983), 177, 289.Google Scholar
18. Armistead, C.J., Knowles, P., Najda, S.P., and Stradling, R.A., J. Phys. C., 17, 6415 (1984).Google Scholar
19. Dean, P.J., and Skolnick, M.S., and Taylor, L.L., J. Appl. Phys, 55, 957 (1984)Google Scholar
20. Skolnick, M.S., Dean, P.J., Taylor, L.L. et al, Appl. Phys. Lett, 44, 881 (1984).CrossRefGoogle Scholar
21. Harris, T.D., Trautman, J.K., and Colonell, J.I., Materials Science Forum, 65–66, 21 (1990).Google Scholar