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Reliability of Ohmic Contacts for AlGaAs/GaAs HBTs

Published online by Cambridge University Press:  16 February 2011

G. S. Jackson ,
E. Tong ,
P. Saledas ,
T. E. Kazior ,
R. Sprague ,
R. C. Brooks  and
K. C. Hsieh
G. S. Jackson
Affiliation:
Raytheon Co., Research Div., 131 Spring St., Lexington, MA 02173
E. Tong
Affiliation:
Raytheon Co., Research Div., 131 Spring St., Lexington, MA 02173
P. Saledas
Affiliation:
Raytheon Co., Research Div., 131 Spring St., Lexington, MA 02173
T. E. Kazior
Affiliation:
Raytheon Co., Research Div., 131 Spring St., Lexington, MA 02173
R. Sprague
Affiliation:
Raytheon Co., Research Div., 131 Spring St., Lexington, MA 02173
R. C. Brooks
Affiliation:
now at: Westinghouse Electric Co., Electronic Systems Group, P.O. Box 1521, Baltimore, MD 21203
K. C. Hsieh
Affiliation:
University of Illinois, Dept. of Elect. Eng., 1406 W. Green St., Urbana, IL 61801
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Abstract

The reliability of ohmic contacts to thin, heavily doped layers of GaAs is investigated. Pd/Ge/Au contacts to n-type GaAs display excellent electrical stability over extended periods of thermal stress. The contact resistance stays below 0.50Ω-mim during a 2500h, 280°C bake. Reactive ion beam assisted evaporation of Ti with N forms TiN which is introduced as a barrier layer in Pt/TiN/Ti/Au contacts to a thin p+ layer. The TiN layer allows greater process latitude in the sintering process and improves long term stability of the ohmic contact. The microstructure of the p-type contacts is examined with TEM and Auger profiling at different instances of the 2500h, 280°C bake and compared to the contact resistance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 225
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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