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Reliability Issues of a Crack-Resistant Passivation Layer Process for Sub-Micron Non-Volatile Memory Technology

Published online by Cambridge University Press:  21 February 2011

Mansour Moinpour ,
John Chu ,
Karen Lubic  and
Farhad Moghadam
Mansour Moinpour
Affiliation:
Intel Corp., California Technology and Manufacturing Group, Santa Clara, CA
John Chu
Affiliation:
Intel Corp., California Technology and Manufacturing Group, Santa Clara, CA
Karen Lubic
Affiliation:
Intel Corp., California Technology and Manufacturing Group, Santa Clara, CA
Farhad Moghadam
Affiliation:
Intel Corp., California Technology and Manufacturing Group, Santa Clara, CA
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Abstract

Chemically vapor deposited phosphosilicate glass (PSG) has been used extensively for final passivation on EPROM and other Non Volatile Memory (NVM) technologies. The maximum amount of phosphorous that can be added to the passivation oxide (post metallization) is constrained by the stability of the as-deposited, undensified film. Atmosphericpressure chemically vapor deposited films of various dopant levels ranging from pure PSG to various boron and phosphorous wt%BPSG films were studied with respect to their passivation properties. The film performance with respect to passivation crack resistance, step coverage, and impacts on metal cracks/voids was evaluated. It was found that the crack resistance was by far more sensitive to boron concentration than that of phosphorous in the undensified film. The crack resistance is shown to be dependent on the as-deposited film densities, moisture levels and amount of shrinkage after a 400° C alloy/anneal. Other important parameters such as stress levels, UV transparency and sodium gettering capabilities were investigated. Reliability data on packaged-device level testing (both ceramic and plastic units) are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 41
Copyright
Copyright © Materials Research Society 1993

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