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Relaxed Si1−xGex Layers on Simox Avoiding a Lattice Mismatched Heterointerface

Published online by Cambridge University Press:  25 February 2011

B. Holländer ,
S. Mantl ,
R. Butz ,
W. Michelsen  and
Ch. Dieker
B. Holländer
Affiliation:
Inst. fOr Schicht- und lonentechnik, Forschungszentrum J0lich, W-5170 JOlich, FRG
S. Mantl
Affiliation:
Inst. fOr Schicht- und lonentechnik, Forschungszentrum J0lich, W-5170 JOlich, FRG
R. Butz
Affiliation:
Inst. fOr Schicht- und lonentechnik, Forschungszentrum J0lich, W-5170 JOlich, FRG
W. Michelsen
Affiliation:
Inst. fOr Schicht- und lonentechnik, Forschungszentrum J0lich, W-5170 JOlich, FRG
Ch. Dieker
Affiliation:
Inst. fOr Schicht- und lonentechnik, Forschungszentrum J0lich, W-5170 JOlich, FRG
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Abstract

For the first time, Si1 xGex layers on amorphous SiO 2 were produced by modification of the Si surface layer of a SIMOX wafer. We used two alternative methods. An additional Si1.. Gey layer was deposited epitaxially on a SIMOX wafer followed by rapid thermal annealing. Diffusional intermixing of the layers produced a homogeneous Si1 xGex layer on SiO 2. In a second attempt, Ge was implanted into the Si surface layer and thermally treated. In both cases epitaxial Si1 xGex layers on SiO2 with minimum yield values around 9% were obtained. Rutherford backscattering and cross sectional transmission electron microscopy were used to characterize the new structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 157
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Mii, Y.J., Xie, Y.H., Fitzgerald, E.A., Monroe, Don, Thiel, F.A., Weir, B.E., and Feldman, L.C., Appl. Phys. Lett. 59 (1991) 1611 Google Scholar
[2] Schaffler, F., Többen, D., Herzog, H.-J., Abstreiter, G., and Hollander, B., Semicond. Sci. Technol. 7 (1992) 260 Google Scholar
[3] Kesan, V.P., May, P.G., LeGoues, F.K., and lyer, S.S., J. Cryst. Growth 111 (1991) 936 Google Scholar
[4] Paine, D.C., Howard, D.J., and Stoffel, N.G., J. Electron. Mat. 20 (1991) 735 Google Scholar
[5] Selvakumar, C.R., and Hecht, B., IEEE Electr. Device Lett. 12 (1991) 444 Google Scholar
[6] Doolittle, L.R., Nucl. Instr. Meth. B15 (1986) 277 Google Scholar
[7] Elliman, R.G., Williams, J.S., Brown, W.L., Leiberich, A., Maher, D.M., and Knoell, R.V., Nucl. Instr. Meth. B19/20 (1987) 435 Google Scholar