Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T07:24:03.551Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxation Of Non-Equilibrium Hydrogen Distributions In a-Si:H

Published online by Cambridge University Press:  10 February 2011

Guy J. Adriaenssens  and
Qing Zhiang
Guy J. Adriaenssens
Affiliation:
Laboratori um voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestij nenlaan 200D, B-3001 Heverlee-Leuven, Belgium.
Qing Zhiang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Get access

Abstract

It is shown that a reduction of the three-level energy diagram proposed by Van de Walle (Phys. Rev. B 53, 11292, 1996) to describe the relaxation of non-equilibrium hydrogen distributions, to just the interstitial transport level and a distribution of traps, allows an essentially equivalent formulation of the hydrogen relaxation kinetics. The modified formulation offers the possibility of accounting for dispersive diffusion while preserving the essential multiple retrapping aspect of the original proposal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 159
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kakalios, J., Street, R. A. and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
2. Street, R.A., Physica B 170, 69 (1991).Google Scholar
3. Jackson, W.B. and Kakalios, J., J, Phys. Rev. B 37, 1020 (1988).Google Scholar
4. Zhang, Q., Takashima, H., Kumeda, M. and Shimizu, T., Jpn. J. Appl. Phys. 34 5933 (1995).Google Scholar
5. Zhang, J., Zhang, Q., Kumeda, M. and Shimizu, T., in Amorphous Silicon Technology- 1995, eds. Hack, M., Schiff, E. A., Madan, A., Powell, M. and Matsuda, A. (Materials Research Society, Pittsburgh, 1995) p. 367.Google Scholar
6. Street, R. A. and Winer, K., Phys. Rev. B 40, 6236 (1989).Google Scholar
7. Xu, X., Sasaki, H., Morimoto, A., Kumeda, M. and Shimizu, T., Phys. Rev. B 41, 10049 (1990).Google Scholar
8. Nebel, C. E., Street, R. A., Jackson, W. B. and Johnson, N. M., Phil. Mag. B 69, 291 (1994).Google Scholar
9. Liu, E. Z. and Spear, W. E., Phil. Mag. B 64, 245 (1991).Google Scholar
10. Van de Walle, C. G., Phys. Rev. B 53, 11292 (1996).Google Scholar
11. Godet, C., Philos. Mag. B 77, 765 (1998).Google Scholar
12. Zhang, Q. and Adriaenssens, G. J., J. Appl. Phys. 81, 6795 (1997).Google Scholar
13. Takeda, H., Hikita, H., Kimura, Y., Yokomichi, H. and Morigaki, K., J. Non-Cryst. Solids 198–200, 486 (1996).Google Scholar