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Relaxation of Metastable Semiconductor Strained-Layer Structures by Plastic Flow
Published online by Cambridge University Press: 25 February 2011
Abstract
The relaxation of misfit strain in metastable structures by plastic flow is described using a continuum model based on Haasen's picture of plastic flow in bulk diamond-phase semiconductors and the concept of excess stress. This model provides a unified explanation of the equilibrium critical thickness, the relaxation behavior of metastable strained-layer structures, and the “metastable” critical thicknesses reported in many semiconductor strained-layer geometries.
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- Copyright © Materials Research Society 1988
References
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