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Relaxation of Metastable Semiconductor Strained-Layer Structures by Plastic Flow

Published online by Cambridge University Press:  25 February 2011

Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
Jeffrey Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

The relaxation of misfit strain in metastable structures by plastic flow is described using a continuum model based on Haasen's picture of plastic flow in bulk diamond-phase semiconductors and the concept of excess stress. This model provides a unified explanation of the equilibrium critical thickness, the relaxation behavior of metastable strained-layer structures, and the “metastable” critical thicknesses reported in many semiconductor strained-layer geometries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Frank, F.C. and van der Merwe, J.H., Proceedings of the Royal Society A198 (1949) 205; A198 (1949) 216; and A200 (1949) 125.Google Scholar
2.Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., Journal of Vacuum Science and Technology A2 (1984) 436.Google Scholar
3.Orders, P.J. and Usher, B.F., Applied Physics Letters 50 (1987) 980.Google Scholar
4.Matthews, J.W. and Blakeslee, A.E., Journal of Crystal Growth 27 (1974) 118.Google Scholar
5.Fritz, I.J., Gourley, P.L., and Dawson, L.R., Applied Physics Letters 51, 1004 (1987).Google Scholar
6.Fritz, I.J., Applied Physics Letters 51, 1080 (1987).Google Scholar
7.Dodson, B.W. and Tsao, J.Y., Applied Physics Letters 51, 1325 (1987).Google Scholar
8.Alexander, H. and Haasen, P., in Solid State Physics, vol 22 (1968).Google Scholar
9.Tsao, J.Y., Dodson, B.W., Picraux, S.T., and Cornelison, D.M., Physical Review Letters (in press).Google Scholar
10.Dodson, B.W. and Tsao, J.Y., submitted to Phys Rev B.Google Scholar
11.Kasper, E. and Herzog, J.J., Thin Solid Films 44 (1977) 357.Google Scholar
12.Eberl, K., Krotz, G., Wolf, T., Schaffler, F., and Abstreiter, G., Semicond. Sci. Tech. 2, 561 (1987).Google Scholar
13.Kamigaki, K., Sakashita, H., Kato, H., Nakayama, M., Sano, N., and Terauchi, H., Appl. Phys. Lett. 49, 1071 (1986).Google Scholar
14.Orders, P.J. and Usher, B.F., Appl. Phys. Lett. 50, 980 (1987).Google Scholar