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Relaxation of Metamorphic III-V Heterostructures Studied by Digital Processing of HREM Images

Published online by Cambridge University Press:  10 February 2011

André Rocher ,
Etienne Snoeck ,
Léon Goldstein ,
Joël Jacquet  and
Catherine Fortin
André Rocher
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS BP 4347, F-31055 Toulouse cedex 4, France
Etienne Snoeck
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS BP 4347, F-31055 Toulouse cedex 4, France
Léon Goldstein
Affiliation:
Alcaltel Alsthom Recherche, route de Nozay, F-91460 Marcoussis, France
Joël Jacquet
Affiliation:
Alcaltel Alsthom Recherche, route de Nozay, F-91460 Marcoussis, France
Catherine Fortin
Affiliation:
Alcaltel Alsthom Recherche, route de Nozay, F-91460 Marcoussis, France
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Abstract

The crystalline structure of metamorphic heterostructures grown by epitaxy has been studied by digital processing of High Resolution Electron Microscopy (HREM) images. Two systems have been investigated: the GaSb/(001)GaAs, known to be fully relaxed by a perfect Lomer dislocation network and the GaAs/(001)InP relaxed by partial and 60° dislocations randomly distributed. A transition zone can be defined between the perfect substrate and the relaxed epitaxial layer: its thickness is less than 20Å in GaSb/GaAs and more than 80Å in GaAs/InP. These results indicate that the misfit dislocations are only one of the elements involved in the relaxation of misfit stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 225
Copyright
Copyright © Materials Research Society 1998

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