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Relaxation of Electron Beam-Induced Metastable Defects in a-Si:II
Published online by Cambridge University Press: 01 January 1993
Abstract
Relaxation of the metastable defect density in undoped amorphous silicon is observed after keV electron irradiation. The time constant for relaxation has an activation energy close to 1 eV, similar to that for light-induced defects. Relaxation appears to follow two or more stages. A large initial density relaxes rapidly, followed by slower relaxation more characteristic of light-induced defects. Separation of these components allows for a better comparison of e-beam and light-induced saturation defect density.
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- Copyright © Materials Research Society 1993
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