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Relaxation of Electron Beam-Induced Metastable Defects in a-Si:II

Published online by Cambridge University Press:  01 January 1993

M. Grimbergen ,
R. Mcconville ,
D. Redfield  and
R.H. Bube
M. Grimbergen
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA
R. Mcconville
Affiliation:
Raychem Corporation,Corporate Technology,Menlo Park, CA
D. Redfield
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA
R.H. Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA
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Abstract

Relaxation of the metastable defect density in undoped amorphous silicon is observed after keV electron irradiation. The time constant for relaxation has an activation energy close to 1 eV, similar to that for light-induced defects. Relaxation appears to follow two or more stages. A large initial density relaxes rapidly, followed by slower relaxation more characteristic of light-induced defects. Separation of these components allows for a better comparison of e-beam and light-induced saturation defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 655
Copyright
Copyright © Materials Research Society 1993

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References

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