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Relaxation of a Strained Elastic Film on a Viscous Layer

Published online by Cambridge University Press:  21 March 2011

R. Huang ,
H. Yin ,
J. Liang ,
K. D. Hobart ,
J. C. Sturm  and
Z. Suo
R. Huang
Affiliation:
Department of Civil and Environmental Engineering, Princeton University, Princeton, NJ 08544
H. Yin
Affiliation:
Department of Electrical Engineering and Center for Photonics & Optoelectronic Materials, Princeton University, Princeton, NJ 08544
J. Liang
Affiliation:
Department of Mechanical & Aerospace Engineering and Princeton Materials Institute, Princeton University, Princeton, NJ 08544
K. D. Hobart
Affiliation:
Naval Research Laboratory, Washington, DC 20375
J. C. Sturm
Affiliation:
Department of Electrical Engineering and Center for Photonics & Optoelectronic Materials, Princeton University, Princeton, NJ 08544
Z. Suo
Affiliation:
Department of Mechanical & Aerospace Engineering and Princeton Materials Institute, Princeton University, Princeton, NJ 08544
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Abstract

Experiments were conducted with SiGe film islands on a layer of borophosphorosilicate glass (BPSG). Initially the SiGe is under compression. Upon annealing, the glass flows and the SiGe islands relax by both inplane expansion and wrinkling. This paper provides a two-dimensional (2D) model for inplane expansion. The results from the model are compared with the experiments with small SiGe islands. The effect of winkling, which is ignored in the present model, is discussed qualitatively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L3.14.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Vanhollebeke, K., Moerman, I., Daele, P.Van, and Demeester, P., Progress in Crystal Growth and Characterization of Materials 41, 1–55 (2000).Google Scholar
2. Hobart, K. D., Kub, F. J., Fatemi, M., Twigg, M. E., Thompson, P. E., Kuan, T. S., and Inoki, C. K., J. Electronic Materials 29, 897–900 (2000).Google Scholar
3. Freund, L. B. and Nix, W. D. (unpublished work).Google Scholar
4. Sridhar, N., Srolovitz, D. J., and Suo, Z., Appl. Phys. Lett. 78, 2482–2484 (2001)Google Scholar
5. Sridhar, N., Srolovitz, D. J., and Cox, B. N., submitted to Acta Materialia.Google Scholar
6. Huang, R. and Suo, Z., Journal of Applied Physics, to appear in the February 1 2002 issue (Preprint available online at www.princeton.edu/~suo, Publication 120).Google Scholar
7. Huang, R. and Suo, Z., International Journal of Solids and Structures, accepted for publication (Preprint available online at www.princeton.edu/~suo, Publication 121).Google Scholar
8. Liang, J., Huang, R., Yin, H., Sturm, J. C., Hobart, K. D., and Suo, Z., submitted to Acta Materialia (Preprint available online at www.princeton.edu/~esuo, Publication 125).Google Scholar
9. Bruel, M., Electronics Letter 31, 1201–1202 (1995).Google Scholar
10. Neuberger, M., Group IV Semiconducting Materials, Handbook of Electronic Materials, vol. 5 (New York, IFI/Plenum, 1971).Google Scholar
11. Walle, C. Van De and Martin, R., Phys. Rev. B 34, 5621–5634 (1986).Google Scholar