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Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

Published online by Cambridge University Press:  22 February 2011

J. Goetzlich ,
P.H. Tsien  and
H. Ryssel
J. Goetzlich
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie, München, West Germany
P.H. Tsien
Affiliation:
Tsinghua University, Beijing, People's Republic of China
H. Ryssel
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie, München, West Germany
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Abstract

Metastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 235
Copyright
Copyright © Materials Research Society 1984

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References

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