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The Relationship of Porous Silicon Film Morphology to The Photoluminescence Spectra

Published online by Cambridge University Press:  25 February 2011

John Penczek  and
R. L. Smith
John Penczek
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis Davis, CA 95616
R. L. Smith
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis Davis, CA 95616
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Abstract

Photoluminescence (PL) spectra are presented for porous silicon samples formed under various formation conditions in aqueous HF solutions. Formation conditions are chosen that effect maximal changes in morphology of resultant films and that correspond to varying formation electrochemistry. The trends in PL center wavelength and full width at half maximum (FWHM) with formation conditions are examined and compared to the resulting morphology. The PL spectra were observed to be most affected by changes in formation conditions when porous films are formed where the electrochemical process of silicon dissolution changes from a 2e- to 4e- (oxide production) reaction. Under these conditions, decreasing HF concentration and/or increasing current density produces a spectral blue-shift which is proportional to the narrowing of the FWHM. This behavior corresponds to morphology changes which are consistent with the quantum confinement model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 193
Copyright
Copyright © Materials Research Society 1993

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