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Relation between Leakage Current in PIN Photodiodes and Defects in InGaAs(P)/InP Heterostructures Grown Low Pressure MOCVD

Published online by Cambridge University Press:  16 February 2011

D. G. Knight ,
C. J. Miner  and
A. J. Springthorpe
D. G. Knight
Affiliation:
Bell-Northern Research, P.O. Box 3511 Sin C, Ottawa, Ontario, Canada KIY 4H7
C. J. Miner
Affiliation:
Bell-Northern Research, P.O. Box 3511 Sin C, Ottawa, Ontario, Canada KIY 4H7
A. J. Springthorpe
Affiliation:
Bell-Northern Research, P.O. Box 3511 Sin C, Ottawa, Ontario, Canada KIY 4H7
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Abstract

High resolution maps of the InGaAs photoluminescence intensity over whole 50mm diameter PIN detector wafers grown by low pressure MOCVD were obtained using a scanning photoluminescence (PL) system. The leakage current of PIN detectors was found to decrease exponentially with increased PL intensity. This correlation was quantitatively valid for both variation on a given wafer and for wafer-to-wafer variations. The density of morphological features on the surface of InGaAs(P)/InP heterostructures also was found to decrease exponentially with increased PL intensity, where a simple linear relationship between leakage current and feature density was then determined. The features are likely a manifestation of substrate defects which propagate from the surface of poor quality substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 157
Copyright
Copyright © Materials Research Society 1990

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References

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