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Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-V Compound Semiconductors
Published online by Cambridge University Press: 10 February 2011
Abstract
A new approach is introduced for identifying a relation between the growth parameters measured in two molecular beam epitaxy systems, thereby realizing transfer of optimized growth conditions transfer. Test results show that the proposed approach is promising.
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- Copyright © Materials Research Society 1998