Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-08T06:34:26.303Z Has data issue: false hasContentIssue false
  • English
  • Français

Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE

Published online by Cambridge University Press:  25 February 2011

K. C. Rajkumar ,
P. Chen  and
A. Madhukar
K. C. Rajkumar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
P. Chen
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
A. Madhukar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
Get access

Abstract

Homoepitaxy on the {1ll} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 315
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Hayakawa, T., Kondo, M., Suyama, T., Takahashi, K., Yamamoto, S. and Hijikata, T., Jap. J. App. Phys., 26, L302 (1987)Google Scholar
2 Smith, D. L., Solid State Commun., 57, 919 (1986)Google Scholar
3 Caridi, E. A., Chang, T. Y., Goosen, K. W. and Eastman, L. F., Appl. Phys. Lett., 56, 660 (1990)Google Scholar
4 Shank, S. M. and Wicks, G. W., Proc. of the viInternational MBE Conf., (to be published in J. Crystal Growth)Google Scholar
5 Rajkumar, K. C., Chen, P. and Madhukar, A., J. App. Phys. (to be published)Google Scholar
6 Cho, A. Y., Panish, M. B. and Hayashi, I., 1970 Svmp. on GaAs. p18 Google Scholar
7 Imamoto, H. Sato, F., Imanaka, K. and Shimma, M., Appl. Phys. Lett., 55, 115 (1989)Google Scholar
8 Cho, A. Y., J. Appl. Phys., 41, 2780 (1970)Google Scholar
9 Rajkumar, K. C., Chen, P. and Madhukar, A., submitted to Proc. of 20th International Conf. on Phys. of Semiconductors (Aug. 6–10, 1990; Thessaloniki, Greece)Google Scholar