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Reflectance Anisotropy and Spectroscopic Ellipsometry Characterisation of Wet Silicon Wafer Cleaning

Published online by Cambridge University Press:  22 February 2011

J. T. Beechinor ,
P.V. Kelly  and
G.M. Crean
J. T. Beechinor
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
P.V. Kelly
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
G.M. Crean
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
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Abstract

Silicon surfaces cleaned using standard wet chemical processes used in silicon device fabrication have been characterised by two optical techniques, spectroscopic ellipsometry (SE) and reflectance anisotropy spectrometry (RAS). Standard peroxide-based Si(100) wafer cleans were studied by SE. It is demonstrated that the residual film on the Si surface is critically dependent on both the sequence and type of cleaning steps performed. The sensitivity of RAS performed on-line under an air ambient to HF etched Si(110) and 4° off axis Si(100) surfaces is evaluated in comparison with kinetic SE data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 59
Copyright
Copyright © Materials Research Society 1994

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