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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

Published online by Cambridge University Press:  01 February 2011

Akira Ishiga ,
Takashi Onishi ,
Yuhuai Liu ,
Masaya Haraguchi ,
Noriyuki Kuwano ,
Tomohiko Shibata ,
Mitsuhiro Tanaka ,
Hideto Miyake  and
Kazumasa Hiramatsu
Akira Ishiga
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Takashi Onishi
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Yuhuai Liu
Affiliation:
Satellite Venture Business Lab., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Masaya Haraguchi
Affiliation:
Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University 6–1 Kasuga-kouen, Kasuga 816–8580, Japan
Noriyuki Kuwano
Affiliation:
Art, Science and Technology Center for Cooperative Research, Kyusyu University 6–1 Kasuga-kouen, Kasuga 816–8580, Japan
Tomohiko Shibata
Affiliation:
NGK Insulators, Ltd. 2–56 Suda-cho, Mizuho-ku, Nagoya, Aichi, 467–8507, Japan
Mitsuhiro Tanaka
Affiliation:
NGK Insulators, Ltd. 2–56 Suda-cho, Mizuho-ku, Nagoya, Aichi, 467–8507, Japan
Hideto Miyake
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
Kazumasa Hiramatsu
Affiliation:
Faculty of Eng., Mie University 1515 Kamihama, Tsu, Mie, 514–8507, Japan
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Abstract

A method for making AlGaN with a high AlN molar fraction and low dislocation density is needed for fabricating deep ultraviolet emitters and detectors. In this study, we reduced the dislocation density in AlGaN over a large surface area by using low-pressure MOVPE on a continuously rugged epitaxial AlN substrate. The AlN molar fraction of the AlxGa1-xN was × = 0.51, and atomic steps in the surface were clearly observed with an atomic force microscope (AFM). In addition, the dislocation density was estimated to be 8.8 × 107 cm−2, which is two orders of magnitude lower than that of AlGaN grown on a flat AlN epitaxial layer. Our results indicate that the dislocation density of AlGaN can be greatly reduced by using a rugged AlN epitaxial substrate with continuously inclined facet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.11
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Nishida, T., Kobayashi, N. and Ban, T., Appl. Phys. Lett. 82 (2003) 1.Google Scholar
2. Miyake, H., Yasukawa, H., Kida, Y., Ohta, K., Shibata, Y., Motogaito, A., Hiramatsu, K., Ohuchi, Y., Tadatomo, K., Hamamura, Y. and Fukui, K., Phys. Stat. Sol.(a) 200 (2003) 151.Google Scholar
3. Koide, Y., Itoh, N., Sawaki, N. and Akasaki, I., Jpn. J. Appl. Phys. 27 (1988) 1156.Google Scholar
4. Ito, K., Hiramatsu, K., Amano, H. and Akasaki, I., J. Cryst. Growth 104 (1990) 533.Google Scholar
5. Shibata, T., Asai, K., Nagai, T., Sumiya, S., Tanaka, M., Oda, O., Miyake, H., and Hiramatsu, K.: Mat. Res. Soc. Symp. Proc. 693 p.541, I9.3. Google Scholar
6. Kida, Y., Shibata, T., Naoi, H., Miyake, H., Hiramatsu, K., and Tanaka, M., phys. stat. Sol. (a) 194 (2002) 498.Google Scholar
7. Kuwano, N., Tsuruda, T.. Kida, Y., Miyake, H., Hiramatsu, K. and Shibata, T., Phys. Stat. Sol. (c) 0 (2003) 2444.Google Scholar
8. Usui, A., Sunakawa, H., Sakai, A., and Yamaguchi, A. A., J. Appl. Phys. 36, L899 (1997).Google Scholar
9. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., J. Appl. Phys. 36, L1568 (1997).Google Scholar
10. Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 144, 133 (1994).Google Scholar
11. Bell, A., Liu, R., and Ponce, F. A., Cherns, D., Amano, H. and Akasaki, I.: Phys. Stat. Sol. (c) 0 (2003) 2136.Google Scholar