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Reduction of Dark Current Under Reverse Bias in a-Si:H p-i-n Photodetectors

Published online by Cambridge University Press:  01 February 2011

S. Morrison ,
P. Servati ,
Y. Vygranenko ,
A. Nathan  and
A. Madan
S. Morrison
Affiliation:
MVSystems Inc., Golden, CO 80401, USA
P. Servati
Affiliation:
Electrical and Computer Eng., University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Y. Vygranenko
Affiliation:
Electrical and Computer Eng., University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
A. Nathan
Affiliation:
Electrical and Computer Eng., University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
A. Madan
Affiliation:
MVSystems Inc., Golden, CO 80401, USA
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Abstract

This paper presents the development of low dark current amorphous silicon (a-Si:H) based heterojunction photodiodes. A series of p-i-n and n-i-p structures have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Junction properties and carrier transport are investigated in terms of dark and light current-voltage characteristics, time dependence of the dark current, and spectral photoresponse measurements. It is demonstrated that a thin (∼4 nm) undoped a-SiC:H buffer layer introduced between the p and i layers reduces the leakage current and improves the diode ideality factor. A dark current density of ∼10 pA/cm2 at reverse bias of 1 V was achieved for the n-i-p structure. Optimization of device design for further improvement of dark current and photoresponse is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A7.4
Copyright
Copyright © Materials Research Society 2002

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