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Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

Published online by Cambridge University Press:  01 February 2011

G. C. Chi ,
J. K. Sheu ,
M. L. Lee ,
C. J. Kao ,
Y. K. Su ,
S. J. Chang  and
W. C. Lai
G. C. Chi
Affiliation:
Department of Physics, National Central University, Chung-Li 320, Taiwan
J. K. Sheu
Affiliation:
Institute of Optical Science, National Central University, Chung-Li 320, Taiwan
M. L. Lee
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
C. J. Kao
Affiliation:
Department of Physics, National Central University, Chung-Li 320, Taiwan
Y. K. Su
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
S. J. Chang
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
W. C. Lai
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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Abstract

AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Sheu, J. K., Kao, C. J., Lee, M. L., Lai, W. C., Yeh, L. S., Chi, G. C., Chang, S. J., Su, Y. K. and Tsai, J. M., J. Electron. Mater., vol. 32, pp. 400–402, 2003 and references therein.Google Scholar
2. Lampert, M. and Mark, P., “Current Injection in Solids” (Academic, New York, 1970)Google Scholar
3. Cheung, S. K. and Cheung, N. W., Appl. Phys. Lett. vol. 49, pp. 85–87, 1986 Google Scholar
4. Norde, H., J. Appl. Phys. vol. 50, pp. 5052–5053, 1979.Google Scholar
5. Paige, E. G. S. and Rees, H. D., Phys. Rev. Lett., Vol. 16, pp. 444–446, 1966.Google Scholar
6. Katz, O., Garber, V., Meyler, B., Bahir, G. and Salzman, J., Appl. Phys. Lett., Vol. 79, pp. 1417–1419, 2001 and references therein.Google Scholar