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Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

Published online by Cambridge University Press:  01 February 2011

G. C. Chi ,
J. K. Sheu ,
M. L. Lee ,
C. J. Kao ,
Y. K. Su ,
S. J. Chang  and
W. C. Lai
G. C. Chi
Affiliation:
Department of Physics, National Central University, Chung-Li 320, Taiwan
J. K. Sheu
Affiliation:
Institute of Optical Science, National Central University, Chung-Li 320, Taiwan
M. L. Lee
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
C. J. Kao
Affiliation:
Department of Physics, National Central University, Chung-Li 320, Taiwan
Y. K. Su
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
S. J. Chang
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
W. C. Lai
Affiliation:
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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Abstract

AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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