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Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

Published online by Cambridge University Press:  15 February 2011

C.-Y. Wei ,
W. Tantraporn ,
W. Katz  and
G. Smith
C.-Y. Wei
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
W. Tantraporn
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
W. Katz
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
G. Smith
Affiliation:
General Electric Research and Development Center, Schenectady, NY 12301 (U.S.A.)
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Abstract

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 419
Copyright
Copyright © Materials Research Society 1982

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References

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