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Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap quantum well disordering

Published online by Cambridge University Press:  10 February 2011

W. J. Choi ,
S. M. Han ,
S. I. Shah ,
S. G. Choi ,
D. H. Woo ,
S. Lee ,
H. J. Kim ,
I. K. Han ,
S. H. Kim  and
J. I. Lee
...Show all authors
W. J. Choi
Affiliation:
ECE Dept., Univerity of California, Santa Barbara, CA 93106, [email protected] [email protected]
S. M. Han
Affiliation:
Physics Dept., Kwangwoon Univ., 447-1 Wolgae-Dong, Nowon-Gu, Seoul 139-701, Korea
S. I. Shah
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
S. G. Choi
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
D. H. Woo
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
S. Lee
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
H. J. Kim
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
I. K. Han
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
S. H. Kim
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
J. I. Lee
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
K. N. Kang
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
J. Cho
Affiliation:
Photonics Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea
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Abstract

Dielectric cap quantum well disordering (DCQWD) of GaAs/AlGaAs multiple quantum well (MQW) structure was carried out by using SiNx. capping layer grown by plasma enhanced chemical vapor deposition (PECVD). By varying the NH3 flow rate with fixed SiH4 flow rate during the SiNx. growth, the characteristics of the capping film were varied. There was an increase in the energy shift of quantum well photoluminescence (PL) peak after thermal treatment of the samples with rapid thermal annealing (RTA) as the NH3 flow rate was increased, although the thickness of SiNx decreased. This is thought to be due to the increase of hydrogen content in SiNx. film grown at higher NH3 flow rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 419
Copyright
Copyright © Materials Research Society 1998

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