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Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si

Published online by Cambridge University Press:  26 February 2011

Martin Bolduc ,
Chaffra Awo-Affouda ,
Frank Ramos  and
Vincent P LaBella
Martin Bolduc
Affiliation:
[email protected], Massachusetts Institute of Technology, Materials Science and Engineering, #13-4017, 77 Massachusetts Ave, Cambridge, Massachusetts, 02139, United States, 617-253-6898, 617-252-1020
Chaffra Awo-Affouda
Affiliation:
[email protected], SUNY - Albany, College of Nanoscale Science and Engineering, United States
Frank Ramos
Affiliation:
[email protected], SUNY - Albany, College of Nanoscale Science and Engineering, United States
Vincent P LaBella
Affiliation:
[email protected], SUNY - Albany, College of Nanoscale Science and Engineering
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Abstract

The redistribution of implanted Mn ions in Si after thermal annealing is studied. P-type Si wafers were implanted with 300-keV Mn+ ions at 350°C to a dose of 1×1015 cm-2, and then annealed at 800 °C for 5 min. Ferromagnetic hysteresis loops were obtained at 10 K using a SQUID magnetometer both before and after annealing. The saturation magnetization increases by ∼2 × after the post-implant annealing, while the Mn redistributes with sharp peaks in concentration. The calculated point-defect profile created during the implantation process peaks around the Mn-depleted region, suggesting that the residual implant damage may play a role in the ferromagnetic behavior of Mn-implanted Si.

Keywords

ion-implantationspintronicSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO17-03
Copyright
Copyright © Materials Research Society 2006

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