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Recrystallization of Si-, As- And BF2-Implanted, Bonded SOI

Published online by Cambridge University Press:  10 February 2011

M. Tamura  and
M. Horiuchi
M. Tamura
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
M. Horiuchi
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Conventional and high-resolution cross-sectional TEM observations have been carried out on Si-, As- and BF2-implanted, bonded 100-nm-thick (001) SOI layers having polycrystalline Si (poly-Si) masks followed by annealing at 600°C. Amorphized SOI layers by these ion implantations are recrystallized through lateral solid-phase seeding epitaxy (L-SPE) by single crystal SOI under the poly-Si mask as a seed. The recrystallization of these SOI layers is completed in the order of BF2-, Si- and As-implanted layers by <110>-directed L-SPE, although the recrystallized layers have a high-density of {111}twins due to {111} facet formation at the growth front occurring during the first 30 s of annealing, independent of implanted ions. On the other hand, in the case of <100>-directed L-SPE, the growth of {110} faceted regions progresses after annealing for a few tens of minutes before folded {111} facets are formed, resulting in a good crystal quality region of 0.1∼0.2μm remaining, measured from the mask edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 465
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. For example, Mitani, K., Nakano, S. and Abe, T., MEICE Trans. on Electronics E80–C, 370 (1997).Google Scholar
2. For example, Ishiwara, H., Yamamoto, H., Furukawa, S., Tamura, M. and Tokuyama, T., Appl. Phys. Lett. 43, 1028 (1983).Google Scholar
3. Kunii, Y., Tabe, M. and Kajiyama, K., J. Appl. Phys. 56, 279 (1984).Google Scholar
4. Csepregi, L., Kennedy, E. F., Gallagher, T. J., Mayer, J. W. and Sigmon, T. W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
5. Ishiwara, H., Dan, T. and Fukami, K., Jpn. J. Appl. Phys. 31, 1695 (1992).Google Scholar
6. Nieh, C. W. and Chen, L. W., J. Appl. Phys. 60, 3546 (1986).Google Scholar
7. Moniwa, M., Kusukawa, K., Murakami, E., Warabisako, T. and Miyao, M., Appl. Phys. Lett. 52, 1788 (1988).Google Scholar
8. Tamura, M. and Horiuchi, M., Jpn. J. Appl. Phys. 27, 1028 (1988).Google Scholar
9. Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H. -J., Jacobson, D. J. and Poate, J. M., Appl. Phys. Lett. 69, 1376 (1996).Google Scholar
10. Yamamoto, H., Ishiwara, H. and Furukawa, S., Jpn. J. Appl. Phys. 24, 411 (1985).Google Scholar