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Recovery Kinetics of Phosphorus Ion-Implanted a-Si:H

Published online by Cambridge University Press:  10 February 2011

J. Nakata ,
S. Wagner ,
H. Gleskova ,
P. A. Stolk  and
J. M. Poate
J. Nakata
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577, Japan
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
H. Gleskova
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P. A. Stolk
Affiliation:
Philips Research Laboratory, 5656 AA Eindhoven, Netherlands
J. M. Poate
Affiliation:
Lucent Technologies Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Hydrogenated amorphous silicon was implanted with phosphorus ions to a uniform concentration of 3×1020 cm-3 and defect saturation. The implants were annealed isochronally up to 400°C in the dark or under additional illumination. This illumination had no effect on recovery. The Urbach energy remains higher than that of silicon-implants. The midgap defect density anneals to ˜ 1018 cm-3, typical of gas-phase doped samples. The dark conductvity remains lower and its thermal activation energy higher than in gas-phase doped samples. We surmise that the Si-Si network absorbs some of the donor electron-induced defect density by forming strained Si-Si bonds. These strained bonds widen the band tails, and thus reduce the effective electron mobility and pin the Fermi level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 653
Copyright
Copyright © Materials Research Society 1996

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