Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-20T09:26:36.390Z Has data issue: false hasContentIssue false
  • English
  • Français

Reconstruction From an Oxidized Si(111) Surface Studied by High-Temperature STM

Published online by Cambridge University Press:  21 February 2011

T. Sato ,
T. Sueyoshi ,
M. Iwatsuki  and
M. Kersker
T. Sato
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
T. Sueyoshi
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
M. Iwatsuki
Affiliation:
JEOL Ltd., Akishima, Tokyo 196, Japan
M. Kersker
Affiliation:
JEOL USA Inc., Peabody, MA 01960
Get access

Abstract

We have investigated the transitions that take place at high-temperature from the oxidized state to the 7×7 phase on the Si (111) surface using high-temperature (HT) scanning tunneling microscopy (STM). The oxidized surface was transformed at 580 °C after oxidation by exposing the surface to 45 L of oxygen at 480° C The structural modification was directly observed by HT-STM. The corner adatom was created at the initial stage of the reconstruction, and then the disordered, 5×5 and 7×7 phases successively appeared on the surface. By etching Si atoms, the island structure was formed on the surface because of the reduced Si density. Finally, the completed 7×7 terrace was created.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 259
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Feltz, A., Memmert, U. and Behm, R. J., Chem. Phys. Lett. 192, 215 (1992).Google Scholar
[2] Seiple, J., Pecquet, J., Meng, Z. and Pelz, J. P., J. Vac. Sci. Technol. A11, 1649 (1993).Google Scholar
[3] Donig, F., Feltz, A., Kulakov, M., Hessel, H. E., Memmert, U. and Behm, R. J., J. Vac. Sci. Technol. B11, 1955 (1993).Google Scholar
[4] Feltz, A., Memmert, U. and Behm, R. J., Surf. Sci. 314, 34 (1994).Google Scholar
[5] Sato, T., Sueyoshi, T., Kitamura, S. and Iwatsuki, M., Extended Abstracts (The 40th Spring Meeting, 1993); The Japan Society of Applied Physics and Related Societies.Google Scholar
[6] Kitamura, S., Sato, T. and Iwatsuki, M., Nature 351, 215 (1991).Google Scholar
[7] Sato, T., Sueyoshi, T., Kitamura, S. and Iwatsuki, M., Jpn. J. Appl. Phys. 32, 2923 (1993).Google Scholar