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Recombination at Oxidation Induced Stacking Faults in Silicon

Published online by Cambridge University Press:  26 February 2011

J. A. Davidson ,
J. H. Evans ,
M. Vandini  and
A. R. Peaker
J. A. Davidson
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering & Electronics, University of Manchester Institute of Science and Technology, Sackville Street, Manchester, M60 1QD, UK
J. H. Evans
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering & Electronics, University of Manchester Institute of Science and Technology, Sackville Street, Manchester, M60 1QD, UK
M. Vandini
Affiliation:
Department of Physics, Bologna University, Via Irnerio 46, 40126 Bologna, Italy
A. R. Peaker
Affiliation:
Centre for Electronic Materials and Department of Electrical Engineering & Electronics, University of Manchester Institute of Science and Technology, Sackville Street, Manchester, M60 1QD, UK
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Abstract

We have characterised the recombination at Oxidation Induced Stacking Faults (OISF) by employing a combination of DLTS and Minority Carrier Transient Spectroscopy (MCTS). The recombination rate at traps associated with the OISF has been compared with recombination at a conventional point defect also present in the silicon. We find that the effect of small amounts of decoration by copper is to increase hole capture rates at electron filled traps. Infra Red Beam Induced Current measurements are consistent with this in that they also indicate that decoration causes enhanced recombination at the extended defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 995
Copyright
Copyright © Materials Research Society 1995

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References

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