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Recent Reliability Progress of GaN HEMT Power Amplifiers

Published online by Cambridge University Press:  17 May 2012

Toshihiro Ohki ,
Masahito Kanamura ,
Yoichi Kamada ,
Kozo Makiyama ,
Yusuke Inoue ,
Naoya Okamoto ,
Kenji Imanishi ,
Kazukiyo Joshin  and
Toshihide Kikkawa
Toshihiro Ohki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Masahito Kanamura
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Yoichi Kamada
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kozo Makiyama
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Yusuke Inoue
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Naoya Okamoto
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kenji Imanishi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kazukiyo Joshin
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Toshihide Kikkawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
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Abstract

In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

Keywords

nitrideIII-Vdevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g08-06
Copyright
Copyright © Materials Research Society 2012

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References

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