Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T06:58:37.690Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Reliability Progress of GaN HEMT Power Amplifiers

Published online by Cambridge University Press:  17 May 2012

Toshihiro Ohki ,
Masahito Kanamura ,
Yoichi Kamada ,
Kozo Makiyama ,
Yusuke Inoue ,
Naoya Okamoto ,
Kenji Imanishi ,
Kazukiyo Joshin  and
Toshihide Kikkawa
Toshihiro Ohki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Masahito Kanamura
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Yoichi Kamada
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kozo Makiyama
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Yusuke Inoue
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Naoya Okamoto
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kenji Imanishi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kazukiyo Joshin
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Toshihide Kikkawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Get access

Abstract

In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

Keywords

nitrideIII-Vdevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g08-06
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mitani, E., Aojima, M., and Sano, S., “A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application,” Proc. European Microwave IC Conf., 2006, pp. 176–179.Google Scholar
2. Kanto, Kazuhiro, Satomi, Akihiro, Asahi, Yasuaki, Kashiwabara, Yasushi, Matsushita, Keiichi, and Takagi, Kazutaka, “An X-band 250W Solid-State Power Amplifier using GaN Power HEMTs,” IEEE Radio and Wireless Symp. Dig., 2008, pp. 77–80.Google Scholar
3. Ohki, Toshihiro, Kikkawa, Toshihide, Inoue, Yusuke, Kanamura, Masahito, Okamoto, Naoya, Makiyama, Kozo, Imanishi, Kenji, Shigematsu, Hisao, Joshin, Kazukiyo, and Hara, Naoki, “ Reliability of GaN HEMTs: Current Status and Future Technology,” IEEE Int. Reliability Phys. Symp. Dig., 2009, pp. 61–70.Google Scholar
4. Meneghesso, Gaudenzio, Verzellesi, Giovanni, Danesin, Francesca, Rampazzo, Fabiana, Zanon, Franco, Tazzoli, Augusto, Meneghini, Matteo, and Zanoni, Enrico, “Reliability of GaN high-electron-mobility transistors: State of the art and perspectives,” IEEE Trans. Device and Materials Rel., vol. 8, pp. 332–343, 2008.Google Scholar
5. Joh, Jungwoo, Xia, Ling, and del Alamo, Jesus A., “Gate current degradation mechanisms of GaN high electron mobility transistors,” IEEE IEDM Tech. Dig., 2007, pp. 385–388.Google Scholar
6. Jimenez, J. L and Chowdhury, U., “X-band GaN FET reliability,” IEEE Int. Reliability Phys. Symp. Dig., 2008, pp. 429–435.Google Scholar
7. Nanishi, Yasushi, “Present status challenges of AlGaN/GaN HFETs,” Proc. Int. Conf. Solid State IC Technology, 2008, pp. 2230–2235.Google Scholar
8. Hasegawa, Hideki and Oyama, Susumu, “Mechanism of anomalous current transport in n-type GaN Schottky contacts,” J. Vac. Sci. Technol., vol. B20, pp. 1647–1655, 2008.Google Scholar
9. Kikkawa, Toshihide, Imanishi, Kenji, Kanamura, Masahito, and Joshin, Kazukiyo, “Recent progress of highly reliable GaN-HEMT for mass production,” Int. Conf. Compound Semiconductor MANTECH Tech. Dig., 2006, pp. 171–174.Google Scholar
10. Khan, M. A., Shur, M. S., Chen, Q. C., and Kuznia, J. N., “Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias,” Electron. Lett., vol. 30, pp. 2175–2176, 1994.Google Scholar
11. Binari, Steven C., Ikossi, Kiki, Roussos, Jason A., Kruppa, Walter, Park, Doewon, Dietrich, Harry B., Koleske, Daniel D., Wickenden, Alma E., and Henry, Richard L., “Trapping effects and microwave power performance in AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices, vol. 48, pp. 465–471, 2001.Google Scholar
12. Ao, Jin-Ping, Yamaoka, Yuya, Okada, Masaya, Hu, Cheng-Yu, and Ohno, Yasuo, “Investigation on current collapse of AlGaN/GaN HFET by gate bias stress,” IEICE Trans. Electron., vol. E91-C, pp. 1004–1008, 2008.Google Scholar
13. Simin, G., Koudymov, A., Tarakji, A., Hu, X., Yang, J., Asif Khan, M., Shur, M. S., and Gaska, R., “Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 79, pp. 2651–2653, 2001.Google Scholar
14. Okamoto, Y., Ando, Y., Hataya, K., Nakayama, T., Miyamoto, H., Inoue, T., Senda, M., Hirata, K., Kosaki, M., Shibata, N., and Kuzuhara, M., “179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate,” Electron. Lett., vol. 40, pp. 629–631, 2004.Google Scholar
15. Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., and Parikh, P., “30-W/mm GaN HEMTs by field plate optimization,” IEEE Electron Device Lett., vol. 25, pp. 117–119, 2004.Google Scholar
16. Palankovski, Vassil, Vitanov, Stanislav, and Quay, Rudiger, “Field-plate optimization of AlGaN/GaN HEMTs,” IEEE Compound Semiconductor IC Symp. Dig., 2006, pp. 107–110.Google Scholar
17. Green, Bruce M., Chu, Kenneth K., Chumbes, E. Martin, Smart, Joseph A., Shealy, James R., and Eastman, Lester F., “The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT’s,” IEEE Electron Device Lett., vol. 21, pp. 268–270, 2000.Google Scholar
18. Mizutani, Takashi, Ohno, Yutaka, Akita, M., Kishimoto, Shigeru, and Maezawa, Koichi, “A study on current collapse in AlGaN/GaN HEMTs induced by bias stress,” IEEE Trans. Electron Devices, vol. 50, pp. 2015–2020, 2003.Google Scholar
19. Kikkawa, T., Nagahara, M., Okamoto, N., Tateno, Y., Yamaguchi, Y., Hara, N, Joshin, K., and Asbeck, P. M., “Surface-charge-controlled AlGaN/GaN-power HFET without current collapse and Gm dispersion,” IEEE IEDM Tech. Dig., 2001, pp. 585–588.Google Scholar
20. Kikkawa, T., Maniwa, T., Hayashi, H., Kanamura, M., Yokokawa, S., Nishi, M., Adachi, N., Yokoyama, M., Tateno, Y., and Joshin, K., “An over 200-W output power GaN HEMT push-pull amplifier with high reliability,” IEEE Int. Microwave Symp. Dig., 2004, pp. 1347–1350.Google Scholar
21. Milligan, J. W., Sheppard, S., Pribble, W., Wu, Y.-F., Muller, St. G., and Palmour, J. W., “SiC and GaN wide bandgap device technology overview,” IEEE Radar Conf. Dig., 2007, pp. 960–964.Google Scholar
22. Conway, A. M., Chen, M., Hashimoto, P., Willadsen, P. J., and Micovic, M., “Accelerated RF life testing of GaN HFETs,” IEEE Int. Reliability Phys. Symp. Dig., 2007, pp. 472–475.Google Scholar
23. Lee, Sangmin, Vetury, Ramakrishna, Brown, Jeffrey D., Gibb, Shawn R., Cai, Will Z., Sun, Jinming, Green, Daniel S., and Shealy, Jeff, “Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48 V applications,” IEEE Int. Reliability Phys. Symp. Dig., 2008, pp. 446–449.Google Scholar
24. Dammann, M., Pletschen, W., Waltereit, P., Bronner, W., Quay, R., Muller, S., Mikulla, M., Ambacher, O., van der Wel, P. J., Murad, S., Rodle, T., Behtash, R., Bourgeois, F., Riepe, K., Fagerlind, M., and Sveinbjornsson, E. O., “Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems,” ROCS Workshop Dig., 2008, pp. 25–36.Google Scholar
25. Smith, K. V., Brierley, S., McAnulty, R., Tilas, C., Zarkh, D., Benedek, M., Phalon, P., and Hooven, A., “GaN HEMT Reliability Through the Decade,” ECS Transactions, vol. 19, pp. 113, 2009.Google Scholar
26. Yamasaki, T., Kittaka, Y., Minamide, H., Yamauchi, K., Miwa, S., Goto, S., Nakayama, M., Kohno, M., and Yoshida, N., “A 68% Efficiency, C-Band 100W GaN Power Amplifier for Space Applications,” IEEE Int. Microwave Symp. Dig., 2010, pp. 1384–1387.Google Scholar
27. Bronner, W., Waltereit, P., Muller, S., Dammann, M., Kiefer, R., Dennler, Ph., van Raay, F., Muser, M., Quay, R., Mikulla, M., and Ambacher, O., “From Epitaxy to Backside Process: Reproducible AlGaN/GaN HEMT Technology for Reliable and Rugged Power Devices,” Int. Conf. Compound Semiconductor MANTECH Tech. Dig., 2011, Paper No. 4–3.Google Scholar
28. Yamaki, Fumikazu, Inoue, Kazutaka, Ui, Norihiko, Kawano, Akihiro, and Sano, Seigo, “A 65 % Drain Efficiency GaN HEMT with 200 W Peak Power for 20 V to 65 V Envelope Tracking Base Station Amplifier,” IEEE Int. Microwave Symp. Dig., 2011, WE3D-4.Google Scholar
29. Tateno, Y. Kawano, A., Adachi, N., Ebihara, K., Ui, N., Sano, H., Hashinaga, T., Miyashita, N., Kurachi, S., Nikaido, J., Sano, S., and Nakajima, S., “GaN HEMT for W-CDMA and WiMAX base station application,” IEEE Int. Microwave Symp., Workshop-WSM, 2006.Google Scholar
30. Inoue, Y., Masuda, S., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Hara, N., Shigematsu, H., and Joshin, K., “Degradation-mode analysis for highly reliable GaN-HEMT,” IEEE Int. Microwave Symp. Dig., 2007, pp. 639–642.Google Scholar
31. Singhal, S., Hanson, A.W., Chaudhari, A., Rajagopal, P., Li, T., Johnson, J.W., Nagy, W., Therrien, R., Park, C., Edwards, A. P., Piner, E. L., Linthicum, K. J., and Kizilyalli, I. C., “Qualification and reliability of a GaN process platform,” Int. Conf. Compound Semiconductor MANTECH Tech. Dig., 2007, pp. 83–86.Google Scholar
32. Shealy, J.B., Vetury, R., Trabert, B. and Runton, D., “A Manufacturable, High Power RF Gallium Nitride (GaN) Technology Portfolio With 65V Operation And Enhanced Linearity,” IEEE Int. Conf. COMCAS Tech. Dig., 2011, 1A1–2.Google Scholar
33. Yamaki, Fumikazu, Inoue, Kazutaka, Nishi, Masahiro, Haematsu, Hitoshi, Ui, Norihiko, Ebihara, Kaname, Nitta, Atsushi, and Sano, Seigo, “Ruggedness and Reliability of GaN HEMT,” Proc. European Microwave IC Conf., 2011, pp. 328–331.Google Scholar
34. Saunier, P., Lee, C., Balistreri, A., Dumka, D., Jimenez, J., Tserng, H. Q., Kao, M. Y., Chao, P. C., Chu, K., Souzis, A., Eliashevich, I., Guo, S., del Alamo, J., Joh, J., and Shur, M., “Progress in GaN performances and reliability,” Device Research Conf. Dig., 2007, pp. 35–36.Google Scholar
35. Heying, Ben, Luo, Wen-Ben, Smorchkova, Ioulia, Din, Salah, and Wojtowicz, Mike, “Reliable GaN HEMTS for High Frequency Applications,” IEEE Int. Microwave Symp. Dig., 2010, pp. 1218–1221.Google Scholar
36. Kanamura, M., Kikkawa, T., Adachi, N., Kimura, T., Yokogawa, S., Nagahara, M., Hara, N., and Joshin, K., “AlGaN/GaN power HEMTs using surface-charge-controlled structure with recessed ohmic technique,” Extended Abstracts of Int. Conf. Solid State Devices and Materials, 2003, pp. 916–917.Google Scholar
37. Ogino, Toshio and Aoki, Masaharu, “Mechanism of yellow luminescence in GaN,” Jpn. J. Appl. Phys., vol. 19, pp. 2395–2405, 1980.Google Scholar
38. Biswas, Nivedita, Gurganus, Jason, and Misra, Veena, “Work function tuning of nickel silicide by cosputtering nickel and silicon,” Appl. Phys. Lett., vol. 87, pp. 171908, 2005.Google Scholar
39. Lebedinskii, Yuri, Zenkevich, Andrei, and Gusev, Evgeni P., “Measurements of metal gate effective work function by x-ray photoelectron spectroscopy,” J. Appl. Phys., vol. 101, pp. 074504, 2007.Google Scholar
40. Ohki, Toshihiro, Kanamura, Masahito, Okamoto, Naoya, Imanishi, Kenji, Makiyama, Kozo, Joshin, Kazukiyo, Kikkawa, Toshihide, and Hara, Naoki, “Effect of gate edge silicidation on gate leakage current in AlGaN/GaN HEMTs,” Int. Conf. Compound Semiconductor MANTECH Tech. Dig., 2008, pp. 249–252.Google Scholar
41. Ha, Min-Woo, Lee, Seung-Chul, Kim, Soo-Seong, Yun, Chong-Man, and Han, Min-Koo, “Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT,” Superlatt. Microstruct., vol. 40, pp. 562–566, 2006.Google Scholar
42. Massalski, T. B., Binary Phase Diagrams Handbook, ASM, 1986.Google Scholar
43. Kamada, Yoichi, Okamoto, Naoya, Ohki, Toshihiro, Kanamura, Masahito, Masuda, Satoshi, Imanishi, Kenji, Shigematsu, Hisao, Kikkawa, Toshihide, Hara, Naoki, and Joshin, Kazukiyo, “Ta-based barrier layer of ohmic interconnects for highly reliable GaN HEMTs,” Phys. Status Solidi C, vol. 8, pp. 2197, 2011.Google Scholar
44. Makiyama, Kozo, Ohki, Toshihiro, Okamoto, Naoya, Kanamura, Masahito, Masuda, Satoshi, Nakasha, Yasuhiro, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Ozaki, Shiro, Nakamura, Norikazu, and Kikkawa, Toshihide, “ High-power GaN-HEMT with low current collapse for millimeter-wave amplifier,” Phys. Status Solidi C, vol. 8, pp. 2442, 2011.Google Scholar