Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-17T20:05:00.820Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Progress of Amorphous Silicon Solar Cell Technology

Published online by Cambridge University Press:  28 February 2011

Y. Hamakawa
Y. Hamakawa*
Affiliation:
Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
Get access

Abstract

A review is given on recent progress in the amorphous silicon solar cells and their technologies. Firstly, some unique advantages of amorphous silicon as a low cost solar cell material are pointed out, and its significant position in the photovoltaic project are discussed. Secondly, newly developed key technologies for improving the photovoltaic performance are demonstrated from the film quality improvement to new junction structure solar cells with a wide and narrow energy gap amorphous silicon alloys. Then, current state of the art in the cell performance are summarized. In the final part, recent feature of the industrializations in both consumer and power application fields are overviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 239
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) Carlson, D.E. and Wonski, C.R, Appl. Phys. Lett., 28 (1976) 671.Google Scholar
(2) for example, Review is given in JARECT Vo.2, edited by Hamakawa, Y. “Amorphous Semiconductor - Technologies & Devices”, North Holland (1982)Google Scholar
(3) Hamakawa, Y., Okamoto, H. and Nitta, Y., Appi. Phys. Lett., 35 (1979) 187.CrossRefGoogle Scholar
(4) Okuda, K., Okamoto, H. and Hamakawa, Y., Jpn. J. Appl. Phys. 22 (1983) L605.CrossRefGoogle Scholar
(5) for example, Review is given in JARECT Vo.6, edited by Hamakawa, Y. “Amorphous Semiconductor - Technologies & Devices”, North Holland (1983).Google Scholar
(6) Maycock, Paul, 4th New Energy Industrial Symposium (Tokyo, 1984) 81.Google Scholar
(7) Hamakawa, Y., Business Japan, 29 (1984) 36.Google Scholar
(8) Okamoto, H., Yamaguchi, T. and Hamakawa, V., J. Non-Crystalline Solids 35–36 (1980) 313.Google Scholar
(9) Taniguchi, M., Hirose, M., Hamasaki, T. and Osaka, Y., Appl. Phys. Lett. 37 (1980) 787.CrossRefGoogle Scholar
(10) Hatsuda, A. Nakagawa, K., Tanaka, K. Matsumura, M., Yamasaki, S., Ohkushi, H. and lijima, S., J. Non-Crystalline Solids 35–36 (1980) 183.CrossRefGoogle Scholar
(11) for example, 9th Intern. Conf. on morphous and Liquid Semiconductors, Grenoble (1981) part II, preparation session.Google Scholar
(12) Hotta, S., Tawada, Y., Okamoto, H. and Hamakawa, Y., J. de Phys. 42 suppl. 10,C-4 (1981) 631.Google Scholar
(13) Gay, R.R., Morel, D.L. and Tanner, D.P., Proc. 4th EC Photovoltaic Solar Energy Conf. Stresa (1982).Google Scholar
(14) Hotta, S., Nishimoto, N., Tawada, Y., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 21 (1982) 289.Google Scholar
(15) Carlson, D.E. and Wronski, C.R., in “Amorphous Semiconductors” ed. Brodsky, M.H. (Springer-Verlag, New York, 1979) chap.l0.Google Scholar
(16) Kashima, Y., Kida, H., Okamoto, H. and Hamakawa, Y., J. Non-cryst. Solids 59/60 (1983) 755.Google Scholar
(17) Kuwano, Y., Ohnishi, M. and Shibuya, H., Jpn. J. Appl. Phys. 20 (1981) 157.CrossRefGoogle Scholar
(18) Hamakawa, Y., J. Non-cryst. Solids 59/60 (1983) 1265.CrossRefGoogle Scholar
(19) Kashima, Y., Nonomura, S., Kida, H., Okamoto, H. and Hamakawa, Y., 5th EC Solar Energy Conf., Athens (1983) 793.Google Scholar
(20) Ohnishi, M., Nishiwaki, H., Enomoto, K., Nakashiria, Y., Isuda, S. and Kuwano, Y., J. Non-cryst. Solids 59/60 (1983) 1107.Google Scholar
(21) Okaniwa, H., Nakatani, K. and Ohuchi, I., Annual Amorphous Silicon Contractor Meeting, Sunshine Project, April 20th, 1984.Google Scholar
(22) Moustakas, T.D., Proc. 5th EC PVSEC, Athens (1983) 698.Google Scholar
(23) Hitotsuyanagi, H., 1983 Annual Amorphous Silicon Contractor Meeting, Sunshine Project, April 20th, 1984.Google Scholar
(24) Dalal, V.L., Akhpar, M. and Dalahoy, A., Proc.16th IEEE PV Specialists Conf., San Diego (1982) 1385.Google Scholar
(25) Matsuda, A., Kaga, T., Tanaka, H., Malhotra, L. and Tanaka, K., Jpn. J. Appl. Phys. 22 (1980) LI15.Google Scholar
(26) Fukuda, N., 1983 Annual Amorphous Silicon Contractor Meeting, Sunshine Project, April 20th, 1984.Google Scholar
(27) Shimada, J., 1983 Annual Amorphous Silicon Contractor Meeting, Sunshine Project, April 20th, 1984.Google Scholar
(28) Konagai, M. and Takahashi, K.: 1985 SERI Workshop, SERI (1985).Google Scholar
(29) Hamasaki, T., Ueda, M., Chayahara, A., Hirose, M. and Osaka, Y., Appl. Phys. Lett. 44 (1984) 600.Google Scholar
(34) Tawada, Y., Kondo, M., Okamoto, H. and Hamakawa, Y., Sol. Energy Mat., 6 (1982) 237.Google Scholar
(35) Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys., 53 (1982) 5273 and Hamakawa, Y., 17th IEEE Photovol. Spec. Conf., Orlando (1984) Late News.Google Scholar
(36) Okamoto, H., Kida, H. and Hamakawa, Y., Solar Cells, 8 (1983) 97.Google Scholar
(37) Okamoto, H., Yamaguchi, T. and Hamakawa, Y., J. Phys.-Soc. Japan 49 (1980) 1213.Google Scholar
(38) Catalano, T., Friester, A. and Fanghman, B., Proc. 16th IEEE Photovol. Special. Conf., San Diego, 1982, IEEE, New York, p.1421.Google Scholar
(39) Nakano, S., Kawada, H., Matsuoka, T., Kiyama, S., Sakai, S., Murata, K., Shibuya, H., Kishi, Y., Nagaoka, I. and Kuwano, Y., Tech. Digest of the Intern. PVSEC, Kobe, Japan, (1984) 583.Google Scholar
(40) Sakai, H., Maruyama, K., Yoshida, T., Ichikawa, Y., Hama, T., Ueno, M., Kamiyama, M. and Uchida, Y., Tech. Digest Intern. PVSEC-1 (Kobe, 1984) 591.Google Scholar
(41) Nakamura, G., Kato, M., Kondo, H., Yukimoto, Y. and Shirahata, K.: J. Phys. (Orsay, Fr.) 42 C4–483 (1981)Google Scholar
(42) Nonomura, S., Okamoto, H., Fukumoto, K. and Hamakawa, Y., J.Non-cryst. Solids 59/60 (1983) 1099.Google Scholar
(43) Okamoto, H., Kida, H., Fukumoto, K. and Hamakawa, Y., J. Non-cryst. Solids 59/60 (1983) 1103.Google Scholar
(44) Tawada, Y., Tsuge, K., Nishimura, K., Okamoto, H. and Hamakawa, Y., Jpn. J. Appl. Phys. 21 (1982) suppl.21-2, 291.Google Scholar
(45). Jchida, U., Sakai, H., Nishiura, M., Miyagi, M. and Maruyama, K., Proc. 8th Int. Vacuum Congr., Cannes, 1980, Vol.1, North-Holland, Amsterdom, 1981, p.669.Google Scholar
(46) Reported by Kagaya, G., Photovoltaic Insider News, Vo.III, No.1, January (1984) 4.Google Scholar
(47) Yamazaki, S., Itoh, K., Watanabe, S. et al., Proc. 17th IEEE PV Special. Conf., Florida, May (1984) P1-IB-i.Google Scholar
(48) Mitchell, K. W., Annual Review of Energy #10 (1984)CrossRefGoogle Scholar
(49) private communication from Ovshinsky, S..Google Scholar
(50) Boer, W. den and Strijp, R. M. Van, Proc. 4th Photovoltaic Solar Energy Conf., Stresa (1982) 764.Google Scholar
(51) Yablonovitchi, E. and Cody, G. D., IEEE Trans. Electron Devices ED–29 (1982) 300.CrossRefGoogle Scholar
(52) Hamakawa, Y., Tawada, Y., Nishimura, K., Tsuge, K., Kondo, M., F-ujioto, K., Nonomura, S. and Okamoto, H.: 16th IEEE Photovol. Special. Conf., San-Diego (1982) 679.Google Scholar
(53) Fujimoto, K., Kawai, H., Okamoto, H. and Hamakawa, Y.: Solar Cells 11 (1984) 357.Google Scholar
(54) lida, H., Miyado, T. and Hayashi, Y.: Proc. 44th Fall Mtg. Soc. Japan Appl. Phys., Sendai, Sept. (1983) 25p-L-2 & 3.Google Scholar
(55) Hamakawa, Y., Okuda, K., takakura, H. and Okamoto, H., Proc. 17th IEEE PV Spec. Conf. (1984, Florida) 1386.Google Scholar
(56) Hamakawa, Y. and Okamoto, H., JARECT vol.16 “Amorpghous Semiconductor Technologies & Devices” (OHMSHA LTD and North-Holland Pub. Co., Tokyo, 1984) 200.Google Scholar