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Recent Progress in Gan Based Field Effect Transistors

Published online by Cambridge University Press:  10 February 2011

M. A. Khan ,
Q. Chen ,
C. J. Sun ,
J. W. Yang  and
M. S. Shur
M. A. Khan
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
Q. Chen
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
C. J. Sun
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
J. W. Yang
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
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Abstract

Most types of GaN based Field Effect Transistors – MESFETs, MISFETs, Heterostructure FETs (HFETs), and Doped Channel HFETs (DC-HFETs) have demonstrated a good performance at both room temperature and elevated temperatures. The DC-HFETs demonstrated the best direct current and microwave characteristics among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. Other advantages of GaN-based materials for FET applications include a very high breakdown field, a very high saturation field, a high peak velocity, a large conduction and valence band discontinuities at the AlN-GaN heterointerface, and a reasonable thermal conductivity (comparable to that of Si). In this paper, we review our recent results obtained for different types of GaN-based transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 17
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

[1] Kelner, G., Shur, M. S., and Harris, G. L., SiC Devices and Ohmic Contacts, in “Properties of Silicon Carbide”, Harris, G., Editor, pp. 231–273, INSPEC, IEE, UK, 1995 Google Scholar
[2] Khan, M. A., Chen, Q., Shur, M. S., Dermott, B. T., and Higgins, J. A., Microwave Operation of GaN/A1GaN Doped Channel Heterostructure Field Effect Transistors, submitted to IEEE Electron Device LettersGoogle Scholar
[3] Khan, M. A., Chen, Q., Shur, M. S., Dermott, B. T., Higgins, J. A., Burm, J., Schaff, W., and Eastman, L. F., Short Channel GaN/AIGaN Doped Channel Heterostructure Field Effect Transistors with 36.1 Cutoff Frequency, submitted to Electronics LettersGoogle Scholar
[4] Khan, M. A., Van Hove, J. M., Kuznia, J. N., and Olson, D. T., Appl. Phys. Lett., 58, 2408 (1991).Google Scholar
[5] Khan, M. A., Kuznia, J. N., Van Hove, J. M., Pan, N., and Carter, J., Appl. Phys. Lett., 60, 3027 (1992)Google Scholar
[6] Khan, M. A., Chen, Q., Sun, C. J., Shur, M. S., and Gelmont, B., Appl. Phys. Lett., 67, 1429 (1995).Google Scholar
[7] Littlejohn, M. A., Hauser, J. R. and Glisson, T. H., Appl. Phys. Lett., 26, 625 (1976)Google Scholar
[8] Gelmont, B., Kim, K. S. and Shur, M., J. Appl. Phys., vol.74, p. 1818 (1993)Google Scholar
[9] Shur, M. S., Gelmont, B., Saavedra-Munoz, C., and Kelner, G., in Proc. 5th Conf. Silicon Carbide and Related Compounds, Bristol and Philadelphia: Institute of Physics Publishing, Conference Series Number 137, p. 465 (1994)Google Scholar
[10] Joshi, R. P. and Raha, P. K., in Proc. 5th Conf. Silicon Carbide and Related Compounds, Bristol and Philadelphia: Institute of Physics Publ., Conf. Series Number 137, p. 687 (1994)Google Scholar
[11] Kolnik, J., Oguzman, I. H., Brennan, K. F., Wang, R., Ruden, P. P., and Wang, Y., J. Appl. Phys., 78 (2), 1033 (1995)Google Scholar
[12] Shur, M. S. and Khan, M. Asif, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, in Proc. of the Symp. on Wide Band Gap Semicond. and the Twenty- Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), Ren, F., Buckley, D. N., Pearton, S. J., Daele, P. Van, Chi, G. C., Kamijoh, T., and Schuermeyer, F., Editors, Proc. Vol. 95–21, pp. 128–135, The Electrochemical Society, inc., NJ (1995)Google Scholar
[13] Chin, V. W. L., Tansley, T. L., and Osotchan, T., J. Appl. Phys., 75, 7365 June (1994)Google Scholar
[14] Rode, D. L. and Gaskill, D. K., Appl. Phys. Lett., 66, 1972 (1995)Google Scholar
[15] Kim, J. G., Frenkel, A. C., Liu, H., and Park, R. M., Appl. Phys. Lett., 65, 91 (1994)Google Scholar
[16] Shur, M., Gelmont, B., and Khan, A., High Electron Mobility in Two Dimensional Electron Gas in A1GaN/GaN Heterostructures, J. Electronic Materials, accepted for publicationGoogle Scholar
[17] Chen, Q., Khan, M. A., Yang, J. W., Sun, C. J., Shur, M. S. and Park, H., High Transconductance Heterostructure Field Effect Transistors Based on AlGaN/GaN, submitted to Appl. Phys. Lett.Google Scholar
[18] Khan, M. A., Kuznia, J. N., Olson, D. T., Schaff, W., Burm, G., Shur, M. S., Applied Physics Letters, 65 (9), pp. 1121–1123 (1994)Google Scholar
[19] Khan, M. A., Shur, M. S., Kuznia, J. N., Burm, J., Schaff, W., Applied Physics Letters, 66 (9), pp. 1083–1085, 27 Feb. (1995)Google Scholar
[20] Binari, S., Rowland, L. B., Kruppa, W., Kelner, G., Doverspike, K., and Gatskill, D. K., Electronics Letters, vol.30, No 15, p. 1248 July (1994)Google Scholar
[21] Binari, S., Rowland, L. B., Kruppa, W., Kelner, G., Doverspike, K., and Gatskill, D. K., presented at the 21-st International Symposium on Compound Semiconductors, San Diego, Sep. 1994 Google Scholar
[22] Binari, S., GaN FETs for High-Temperature and Microwave Applications, in Proc. of the Symp. on Wide Band Gap Semicond. and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), Ren, F., Buckley, D. N., Pearton, S. J., Daele, P. Van, Chi, G. C., Kamijoh, T., and Schuermeyer, F., Editors, Proc. Vol.95–21, pp. 136- 143, The Electrochemical Society, inc., NJ (1995)Google Scholar
[23] Chen, Q., Khan, A., Yang, J. W., Sun, C. J., Shur, M. S., and Park, H., Appl. Phys. Lett.Google Scholar
[24] Khan, M. Asif, Shur, M., and Chen, Q., High Transconductance AlGaN/GaN Optoelectronic Heterostructure Field Effect Transistor, Electronics Letters, to be publishedGoogle Scholar
[25] Lee, K., Shur, M. S., Fjeldly, T. A., and Ytterdal, T., Semiconductor Device Modeling for VLSI, Prentice Hall, Englewood Cliffs, NJ (1993)Google Scholar
[26] Khan, M. Asif, Chen, Q., Shur, Michael S., Dermott, B. T., Higgins, J. A., Burm, J., Schaff, W. J., and Eastman, L. F., CW Operation of Short Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 and 15 GHz, unpublishedGoogle Scholar
[27] Khan, M. Asif, Chen, Q., Sun, C. J., Yang, J. W., and Blasingame, M., Shur, M. S., and Park, H., Enhancement and Depletion Mode Photosensitive GaN/AIGaN Heterostructure Field Effect Transistors, Applied Physics Letters, accepted for publicationGoogle Scholar