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Recent Developments in High Resistivity Detector-Grade CdTe

Published online by Cambridge University Press:  21 February 2011

M. Hage-Ali  and
P. Siffert
M. Hage-Ali
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2 (France)
P. Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2 (France)
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Abstract

We present a brief review of results concerning the doping or compensation of CdTe by different elements like halogen, group IV, hydrogen and 3d transition elements for high resistivity materials. Comparison with theoretical models and discussion of results under this light is provided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 479
Copyright
Copyright © Materials Research Society 1993

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References

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