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Recent Advances in the Synthesis of Polyfluorenes as Organic Semiconductors

Published online by Cambridge University Press:  17 March 2011

David J. Brennan ,
Yu Chen ,
Shaoguang Feng ,
James P. Godschalx ,
Gary E. Spilman ,
Paul H. Townsend ,
Scott R. Kisting ,
Mitchell G. Dibbs ,
Jeff M. Shaw  and
Dean M. Welsh
...Show all authors
David J. Brennan
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Yu Chen
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Shaoguang Feng
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
James P. Godschalx
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Gary E. Spilman
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Paul H. Townsend
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Scott R. Kisting
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Mitchell G. Dibbs
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Jeff M. Shaw
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Dean M. Welsh
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Jessica L. Miklovich
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
Debra Stutts
Affiliation:
The Dow Chemical Company, Midland, Michigan, USA, 48674
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Abstract

New poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Improvements in solubility are realized when the bithiophene unit of F8T2 is replaced by dihexylterthiophene or dihexylpentathiophene units. Melting temperatures are also lowered by 50 – 100°C in these polymers when compared to F8T2. Replacement of the bithiophene unit of F8T2 with a dihexylpentathiophene unit also results in a significant improvement in hysteresis (< 2 V vs. 3.5 – 5 V for F8T2). Initial results are also reported on the thermal cleavage of the C8 side groups of F8T2, which yields an insoluble polymeric semiconductor film that continues to exhibit transistor switching characteristics as part of a bottom gate device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I12.1
Copyright
Copyright © Materials Research Society 2004

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