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Recent Advances in Semiconductor Nanocluster Preparation

Published online by Cambridge University Press:  28 February 2011

A. P. Alivisatos ,
V. L. Colvin ,
A. N. Goldstein ,
M. A. Olshavsky  and
J. J. Shiang
A. P. Alivisatos
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
V. L. Colvin
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
A. N. Goldstein
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
M. A. Olshavsky
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
J. J. Shiang
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
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Abstract

Semiconductor nanocrystals have received an extraordinary degree of attention during thepast few years. The electronic, optical, photochemical, and thermodynamic properties of these materials are strongly size dependent, providing a rich area of research, with many potential applications1. It remains true that the range of phenomena that can be studied in nanocrystals is limited by the quality of available samples. In this paper we describe two advances in the preparation of nanocrystalline semiconductor samples. First is the preparation of CdS nanocrystals covalently bound to a metal surface; in this configuration it is possible to study the nanocrystals by photoemission. Second, we report the organometallic synthesis of GaAs nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 195: Symposium S – Physical Phenomena in Granular Materials , 1990 , 597
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Henglein, A., Topics in Current Chemistry 143 113 (1988); L. E. Brus, J. Phys. Chem. 90 2555 (1986); L. E. Brus, IEEE J. Quant. Elec. QE-22 1909 (1987).Google Scholar
2. Brus, L.E., Nouveau J. Chim. 11, 123 (1987).Google Scholar
3. Lippens, P.E. and Lannoo, M., Physical Review B 39, 10935 (1989).Google Scholar
4. Schmitt-Rink, S., Miller, D.A.B., and Chemla, D.S., Phys. Rev. B. 35, 8113 (1987).Google Scholar
5. Hu, Y. Z. et al. , Phys. Rev. Lett. 64, 1805 (1990).Google Scholar
6. Alivisatos, A. P. et al. , J. Chem. Phys. 89, 4001 (1988).Google Scholar
7. Colvin, V. L., Goldstein, A. N., and Alivisatos, A. P., manuscript in preparation.Google Scholar
8. Steigerwald, M.L. et al. , J. Am. Chem. Soc. 110, 3046 (1988).Google Scholar
9. Nosaka, Yoshio et al. , Chem. Lett., 605 (1988).Google Scholar
10. Shiang, J.J., Goldstein, A. N., and Alivisatos, A. P., J. Chem. Phys. 92 3232 (1990).Google Scholar
11. Colvin, V.L., Alivisatos, A. P. and Tobin, J. G., submitted to Phys. Rev. Lett., May 1990.Google Scholar
12. Brus, L.E., J. Chem. Phys. 79 5566 (1983).Google Scholar
13. Schmitt-Rink, S., Miller, D. A. B., and Chemla, D. S., Phys. Rev. B 35, 8113 (1987).Google Scholar
14. Miller, D.A.B., Chemla, D. S., and Schmitt-Rink, S., Phys. Rev. B 33, 6976 (1986); ibid, Appl. Phys. Lett. 52, 2154 (1988).Google Scholar
15. Wells, R.L., Pitt, C. G., McPhail, A. T., Purdy, A. P., Shafieezad, S., and Hallock, R. B., Chemistry of Materials 1, 4 (1989).Google Scholar
16. Wells, R. L., Shafieezad, S., McPhail, A. T., Pitt, C. G., J. Chem. Soc.'Chem. Commun. 1823 (1987).Google Scholar
17. Becker, G., Gutekunst, G. and Wessely, H. J., Z. Anorg. Allg. Chemic 462, 113 (1980).Google Scholar
18.Tris (trimethylsilyl)arsine : IR (neat liquid) 2892(m), 2890(s), 2828(s), 2816 (s) 2785(vs), 1446(s), 1400(vs), 1306(s), 1259(vs), 1240(w), 1124(m), 869(w); IH NMR (300MHz, C6D6) 6 0.35 (s, -SiMe3).Google Scholar