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Real-Time Surface and Near-Surface Optical Diagnostics for Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

D. E. Aspnes
D. E. Aspnes*
Affiliation:
Department of Physics, NCSU, Raleigh, NC 27695-8202, USA
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Abstract

Various optical diagnostics are being developed to meet new challenges in semiconductor epitaxy. New data-analysis algorithms allow near-surface alloy compositions and interface properties to be obtained by kinetic ellipsometry (KE) without any knowledge of the underlying sample structure. New information about growth is being obtained by surface-oriented probes such as laser light scattering (LLS), surface photoabsorption (SPA), anrd reflectance-difference (-anisotropy) spectroscopy (RDS/RAS). Examples are provided and likely directions of further progress discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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