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Real-time Monitoring and Control of Silicon Epitaxy Using Emission Fourier Transform Infrared Spectroscopy

Published online by Cambridge University Press:  22 February 2011

Z.H. Zhou ,
H. Kim  and
Rafael Reif
Z.H. Zhou
Affiliation:
Department of Electrical Engineering and Computer Science
H. Kim
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science
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Abstract

Real-time epi-film thickness is measured by an Emission Fourier Transform Infrared Spectrometer (E/FT-IR). The E/FT-IR takes advantage of the heated wafer as the source of IR radiation. In our experiments, wafers were cleaned using in-situ ECR hydrogen plasma followed by film growth. The cleaning and deposition processes were monitored in real-time using the E/FT-IR technique. We have demonstrated the application of E/FT-IR for observing real-time growth rates and incubation times. Based on these real-time observations, the predeposition plasma cleaning process and the deposition process can be effectively monitored and controlled in real-time. Application of E/FT-IR in optimizing the predeposition hydrogen plasma cleaning process was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 365
Copyright
Copyright © Materials Research Society 1994

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References

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