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Real-Time in Situ Monitoring of Defect Evolution at Widegap II-VI/GaAs Heterointerfaces during Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

C.M. Rouleau  and
R.M. Park
C.M. Rouleau
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R.M. Park
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
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Abstract

We report the real-time in situ observation of heterointerface dislocation formation during the growth of lattice-mismatched widegap II-VI/GaAs heterostructures. Such observations were made by employing a near-normal incidence HeNe laser probe during epitaxial growth which generated both a laser reflection interferometry (LRI) signal as well as an elastically scattered laser light (ELLS) signal. We believe that the scattered light signal is generated at the II-VI/GaAs heterointerface based on the observation of a π phase difference between the LRI and the ELLS signals which were monitored simultaneously. We suggest, therefore, that the observed ELLS signal is a consequence of dislocation formation at the heterointerface which occurs due to plastic deformation in lattice-mismatched systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 125
Copyright
Copyright © Materials Research Society 1994

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