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Realization Of X-Ray Lithography Masks Based On Diamond Membranes

Published online by Cambridge University Press:  15 February 2011

M. F. Ravet
Affiliation:
Laboratoire de Microstructures et de Microélectronique/CNRS, BP 107, 196 Av. Henri Ravera, 92225 Bagneux, France.
A. Gicquel
Affiliation:
Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions/CNRS, Université Paris-Nord, Av. J.B. Clément, 93430 Villetaneuse, France.
E. Anger
Affiliation:
Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions/CNRS, Université Paris-Nord, Av. J.B. Clément, 93430 Villetaneuse, France.
Z. Z. Wang
Affiliation:
Laboratoire de Microstructures et de Microélectronique/CNRS, BP 107, 196 Av. Henri Ravera, 92225 Bagneux, France.
Y. Chen
Affiliation:
Laboratoire de Microstructures et de Microélectronique/CNRS, BP 107, 196 Av. Henri Ravera, 92225 Bagneux, France.
F. Rousseaux
Affiliation:
Laboratoire de Microstructures et de Microélectronique/CNRS, BP 107, 196 Av. Henri Ravera, 92225 Bagneux, France.
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Abstract

Deposition parameters acting on nucleation and growth local conditions have been optimized in a bell jar microwave plasma reactor to obtain polycrystalline diamond thin films compatible with X-ray membrane requests. The microstructure and the chemical quality of the films were estimated by SEM and Raman spectroscopy respectively, the roughness was evaluated by AFM experiments and the residual stress was deduced from the substrate deflection method. Membranes were obtained by removing the silicon substrate on 15 mm diameter circular windows. The optical transparency depending on deposition conditions was optimized up to 65% at 630 nm for 1 μm thickness. A high resolution additive mask process, based on well taut membranes and low stress electroplated gold absorber, was carried out. Micrometric and submicrometric mask patterns were generated in photoresists both by electron beam lithography with a nanopattern generator and by X-ray lithography using the synchrotron radiation facility implemented at LURE-Orsay. Despite the diamond films roughness of the order of 30 nm, well defined dots and lines as narrow as 100–200 nm could be obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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