Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:25:16.316Z Has data issue: false hasContentIssue false

Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

Published online by Cambridge University Press:  01 February 2011

Yung-Jr Hung
Affiliation:
[email protected], National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
San-Liang Lee
Affiliation:
[email protected], National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
Brian J. Thibeault
Affiliation:
[email protected], University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
Larry A. Coldren
Affiliation:
[email protected], University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
Get access

Abstract

A simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Murthy, B. R. J. Ng, K. K. Selamat, E. S. Balasubramanian, N. and Liu, W. T.Siliconnanopillar substrates for enhancing signal intensity in DNA microarrays,” Biosens.Bioelectron. 24, 723728 (2008).Google Scholar
2 Talin, A. A. Hunter, L. L. Leonard, F. and Rokad, B.Large area, dense silicon nanowirearray chemical sensors,” Appl. Phys. Lett. 89, 153102 (2006).Google Scholar
3 Qin, H. Kim, H.S. and Blick, R. H.Nanopillar arrays on semiconductor membranes aselectron emission amplifiers,” Nanotechnology 19, 095504 (2008).Google Scholar
4 Poborchii, V. Tada, T. T. Kanayama and Moroz, A.Silver-coated silicon pillar photoniccrystals: enhancement of a photonic band gap,” Appl. Phys. Lett. 82, 508510 (2003).Google Scholar
5 Tada, T. Poborchii, V. V. and Kanayama, T.Channel waveguides fabricated in 2D photoniccrystals of Si nanopillars,” Microelectr. Eng. 63, 259265 (2002).Google Scholar
6 Goldberger, J. Hochbaum, A. I. Fan, R. and Yang, P.Silicon vertically integrated nanowirefield effect transistors,” Nano Lett. 6, 973977 (2006).Google Scholar
7 Huang, M.J. Yang, C. R. Chiou, Y. C. and Lee, R. T.Fabrication of nanoporousantireflection surfaces on silicon,” Solar Energy Mater. & Solar Cells 92, 13521357 (2008).Google Scholar
8 Lin, G. R. Chang, T. C. Liu, E. S. Kuo, H. C. and Lin, H. S.Low refractive index Sinanopillars on Si substrate,” Appl. Phys. Lett. 90, 181923 (2007).Google Scholar
9 Tada, T. Poborchii, V. V. and Kanayama, T.Fabrication of photonic crystals consisting of Sinanopillars by plasma etching using self-formed masks,” J. J. Appl. Phys. 38, 72537256 (1999).Google Scholar
10 Kuo, C.W. Shiu, J. Y. and Chen, P.Size and shape-controlled fabrication of large-areaperiodic nanopillar arrays,” Chem. Mater. 15, 29172920 (2003).Google Scholar
11 Kuo, C.W. Shiu, J. Y. Chen, P. and Somorjai, G. A.Fabrication of size-tunable large-areaperiodic silicon nanopillar arrays with sub-10nm resolution,” J. Phys. Chem. B107, 99509953 (2003).Google Scholar
12 Chang, Y.F. Chou, Q.R. Lin, J.Y. and Lee, C.H.Fabrication of high-aspect-ratio siliconnanopillar arrays with the conventional reactive ion etching technique,” Appl. Phys. A86, 193196 (2007).Google Scholar
13 Hsu, C. H. Lo, H. C. Chen, C. F. Wu, C. T. Hwang, J. S. Das, D. Tsai, J. Chen, L.C. and Chen, K.H.Generally applicable self-masked dry etching technique for nanotip arrayfabrication,” Nano Lett. 4, 471475 (2004).Google Scholar
14 Bai, X. D. Xu, Z. Liu, S. Wang, E. G.Aligned 1D silicon nanostructure arrays by plasmaetching,” Sci. Technol. Adv. Mater. 6, 804808 (2005).Google Scholar
15 Ayon, A. A. Braff, R. Lin, C. C. Sawin, H. H. and Schmidt, M. A.Characterization of a timemultiplexed inductively coupled plasma etcher,” J. Electrochem. Soc. 146, 339349 (1999).Google Scholar
16 Wang, X. Zeng, W. Lu, G. Russo, O. L. and Eisenbraun, E.High aspect ratio Bosch etchingof sub-0.25 m trenches for hyperintegration applications,” J. Vac. Sci. Technol. B25, 13761381 (2007).Google Scholar
17 Choi, C.H. and Kim, C.J.Fabrication of a dense array of tall nanostructures over a large sample area with sidewall profile and tip sharpness control,” Nanotechnology 17, 53265333 (2006).Google Scholar
18 Morton, K. J, Nieberg, G. Bai, S. and Chou, S. Y, “Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (50:1) silicon pillar arrays by nanoimprint and etching,” Nanotechnology 19, 345301 (2008).Google Scholar
19 Hung, Y.J. Lee, S.L. and Pan, Y.T. “Holographic realization and bandgap tolerance evaluation of hexagonal two-dimensional photonic crystals,” Intl. Conf. Optics and Photonics Taiwan'08, paper Sat-S8-02, Taiwan (2008)Google Scholar
20 Hung, Y.J. Lee, S.L. and Pan, Y.T. “Holographic realization of two-dimensional photonic crystal structures on silicon substrates,” Integrated Photonics and Nanophotonics Research and Applications (IPNRA'09), paper IWD5, Honolulu, Hawaii, USA (2009).Google Scholar
21 Hung, Y.J. Lee, S.L. and Coldren, L. A.Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption,” Optics Express 18, 6841 (2010).Google Scholar