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The Realization of Molecular Control Over Solid State Structure: Chemical Vapor Deposition of Gallium and Indium Sulfide Films

Published online by Cambridge University Press:  22 February 2011

Michael B. Power ,
Andrew N. Macinnes ,
Aloysius F. Hepp  and
Andrew R. Barron
Michael B. Power
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138 NASA, Lewis Research Center, Cleveland, OH 44135
Andrew N. Macinnes
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138 Gallia Inc., Weston, MA 02193
Aloysius F. Hepp
Affiliation:
NASA, Lewis Research Center, Cleveland, OH 44135
Andrew R. Barron*
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
*
* Author to whom all correspondence should be addressed.
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Abstract

The chemical vapor deposition of cubic gallium sulfide and tetragonalindium sulfide films is reported. The structure of the deposited films was demonstrated to be defined not solely by thermodynamics, but bythe predesigned molecular motif of the precursor molecules. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 659
Copyright
Copyright © Materials Research Society 1993

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References

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