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Real Time X-Ray Studies of Interface Kinetics in Epitaxial Strained Layers

Published online by Cambridge University Press:  15 February 2011

Roy Clarke ,
Waldemar Dos Passos ,
Walter Lowe ,
Brian Rodricks  and
Cristine Brizard
Roy Clarke
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Waldemar Dos Passos
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109
Walter Lowe
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Brian Rodricks
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439
Cristine Brizard
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439
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Abstract

A new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron radiation measurements of the strain relaxation during rapid thermal annealing (RTA) show that the lattice strain of an as-grown strained layer structure GaAs-Inx.Ga1−x-As-GaAs/GaAs is relieved cooperatively by a series of sluggish discontinuous transitions. We find that ion implantation enhances the annealing kinetics of InAlAs strained layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 225
Copyright
Copyright © Materials Research Society 1992

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References

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