Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-05T09:59:54.280Z Has data issue: false hasContentIssue false

Real Time Optical Diagnostics in Laser Etching and Deposition

Published online by Cambridge University Press:  26 February 2011

Irving P. Herman
Affiliation:
Department of Applied Physics and the Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027.
Hua Tang
Affiliation:
Department of Applied Physics and the Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027.
Patrick P. Leong
Affiliation:
Department of Applied Physics and the Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027.
Get access

Abstract

Optical probing of laser-assisted chemical reactions on surfaces in real time can help explain and control these processes. Raman microprobe spectroscopy and micro laser induced fluorescence are the two optical probes employed here to investigate several examples of localized laser surface reactions. Raman microprobe analysis is used to monitor in real time the CuCl and CuCl2 products on the surface during local laser etching of copper films by Cl2 and the concomitant loss of the Cu2O passivation layer. It is also used to follow the production of Cu2O during the laser oxidation of Cu. Polarization Raman analysis is utilized to identify and analyze partially molten silicon during laser heating in vacuum and during the etching of silicon by chlorine. Laser induced fluorescence is used as a real time microprobe of desorbed products during local laser-assisted etching of Si and Al surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baufay, L., Houle, F., and Wilson, R. J., J. Appl. Phys. 61, 4640 (1987).Google Scholar
2. Andrew, R., Appl. Phys. B41, 205 (1986).Google Scholar
3. Tang, H. and Herman, I. P., J. Vac. Sci. Technol. A8, 1608 (1990).Google Scholar
4. Powell, D., Compaan, A., Macdonald, J. R., and Forman, R. A., Phys. Rev. B12, 20 (1975).Google Scholar
5. Tang, H. and Herman, I. P., Phys. Rev. B (in press).Google Scholar
6. Pazionis, G. D., Tang, H., and Herman, I. P., IEEE J. Quantum Electron. 25, 976 (1989).Google Scholar
7. Magnotta, F. and Herman, I. P., Appl. Phys. Lett. 48, 195 (1986);Google Scholar
Herman, I. P., Magnotta, F., and Kotecki, D. E., J. Vac. Sci. Technol. A4, 659 (1986).Google Scholar
8. Treyz, G. V., Beach, R., and Osgood, R. M. Jr., J. Vac. Sci. Technol. B6, 37 (1988).Google Scholar
9. Abstreiter, G., Cardona, M., and Pinczuk, A., in Light Scattering in Solids IV. Topics in Appl. Phys. 54, edited by Cardona, M. and Guntherodt, G. (Springer, New York, 1984), p. 5.Google Scholar
10. Licata, T.J., Podlesnik, D.V., Tang, H., Herman, I.P., Osgood, R.M. Jr., and Schwarz, S.A., J. Vac. Sci. Technol. A8, 1618 (1990).Google Scholar
11. Ho, P. and Breiland, W. G., Appl. Phys. Lett. 43, 125 (1983).Google Scholar
12. Magnotta, F., Microbeam Analysis-1987. Ed. Geiss, R. H., San Francisco Press, San Francisco, CA, p. 153, and personal communication.Google Scholar
13. Pasternack, L. and Dagdigian, P. J., J. Chem. Phys. 67, 3854 (1977).Google Scholar
14. Partridge, H., Langhoff, S. R., Lengsfield, B. H. III and Liu, B., J. Quant. Spectrosc. Radiat. Transfer 30, 449 (1983).Google Scholar