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Real Time Observations of Dislocation-Mediated Plasticity in the Epitaxial AI (011)/Si(100) Thin Film System

Published online by Cambridge University Press:  10 February 2011

Eric A. Stach ,
U. Dahmen  and
W.D. Nix
Eric A. Stach
Affiliation:
National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, email: [email protected], http://ncem.lbl.gov
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720: http://ncem.lbl.gov
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Palo Alto, CA 94305
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Abstract

Despite numerous theoretical and experimental studies of strain relaxation in metal films on silicon substrates, the exact mechanisms by which dislocations mediate plasticity in these structures are not well understood. To elucidate these mechanisms, we present results from in-situ transmission electron microscopy annealing of thin aluminum films grown on Si (100). As a model system, we have chosen to focus on aluminum films which contain two (011) epitaxial variants with respect to the silicon substrate. In this paper we discuss our observations of the glide and climb behavior of dislocations in these structures during thermal cycling. These observations give qualitative insight into the mechanisms by which dislocation motion accommodates thermally induced strains in thin metal films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 27
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 comprehensive reviews, see Nix, W.D., Met. Trans. A 20, 2217, 1989 and W.D. Nix, Mat. Sci. Eng. A 234-236, 37, 1997.Google Scholar
2 The evolution of this field of research is well documented in the Mat. Res. Soc. Proc. series Thin Films: Stresses and Mechanical Properties, vols. 1–7 (Materials Research Society, Pittsburgh, PA, 1988–1997).Google Scholar
3 Doerner, M.F. and Brennan, S., J. Appl. Phys. 63, 126, 1988. I.C. Noyan, T.C. Huang and B.R. York, Crit. Rev. Solid State and Mat. Sci., 20, 125, 1995.Google Scholar
4 Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Trans. on Electron Devices, vol. ED34, 869, 1987.Google Scholar
5 Vlassak, J.J. and Nix, W.D., J. Mater. Res., 7, 3243, 1992.Google Scholar
6 Wiehs, T.P., Hong, S., Bravman, J.C. and Nix, W.D., J. Mater. Res. 3, 931, 1988; J. Florando, H. Fujimoto, Q. Ma, 0. Kraft, R. Schwaiger and W.D. Nix, in Materials Reliability in Microelectronics IX, p.231 (Materials Research Society, Pittsburgh, PA, 1999.)Google Scholar
7 Pethica, J., Hutchings, R. and Oliver, W.C., Phil. Mag. A 48, 593, 1983.Google Scholar
8 Thangarj, N., Westmacott, K.H., and Dahmen, U., Appl. Phys. Lett. 61, 37, 1992.Google Scholar
9 Hull, R., Appl. Phys. Lett. 63, 1782, 1992.Google Scholar
10Ibis Technology Corporation, 32 Cherry Hill Drive, Danvers, MA 01923Google Scholar
11 Stach, E.A., Hull, R., Tromp, R.M., Reuter, M.C., Copel, M., LeGoues, F.K. and Bean, J.C., J. Appl. Phys. 83, 1931, 1998.Google Scholar
12 ‘Quicktime’ movies of these experiments can be viewed on the internet at the website: http://ncem.lbl.gov/Al_ bicrystal_annealsGoogle Scholar