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Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

Published online by Cambridge University Press:  15 February 2011

J. A. Floro ,
E. Chason  and
S. R. Lee
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185-1415, [email protected]
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185-1415, [email protected]
S. R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185-1415, [email protected]
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Abstract

We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 491
Copyright
Copyright © Materials Research Society 1996

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References

1. Mirecki-Millunchick, J. and Barnett, S. A., Appl. Phys. Lett. 65 1136 (1994)Google Scholar
2. Whaley, G. J. and Cohen, P. I., Appl. Phys. Lett. 57, 144 (1990).Google Scholar
3. Stoney, G. G., Proc. R. Soc. London Ser. A 82, 172 (1909).Google Scholar
4. Townsend, P. H., Barnett, D. M., and Brunner, T. A., J. Appl. Phys. 62, 4438 (1987).Google Scholar
5. Flinn, Paul A., Gardner, Donald S., and Nix, William D., IEEE Trans. Electron Devices ED-34, 689 (1987).Google Scholar
6. Gillard, Veronique T. and Nix, William D., Zeitschrift fur Metallkunde 84, 874 (1993).Google Scholar
7. Volkert, C. A., Fitzgerald, E. A., Hull, R., Hie, Y. X., and Mi, Y. J., J. Elec. Mater. 20, 833 (1991).Google Scholar
8. Schell-Sorokin, A. J. and Tromp, R. M., Phys. Rev. Lett. 64, 1039 (1990).Google Scholar
9. k-Space Associates, Inc., 2231 Stone Drive, Ann Arbor, MI 48105.Google Scholar
10. Freund, L. B., J. Mech. Phys. Solids 38, 657 (1990).Google Scholar