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Reactive Solid-Phase Epitaxy: ∼ A novel growth method for single-crystalline thin films of complex oxides with superlattice structure ∼

Published online by Cambridge University Press:  11 February 2011

H. Ohta ,
K. Nomura ,
H. Hiramatsu ,
T. Suzuki ,
K. Ueda ,
M. Orita ,
M. Hirano ,
Y. Ikuhara  and
H. Hosono
H. Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
K. Nomura
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
H. Hiramatsu
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
T. Suzuki
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta, Nagoya 456–0023, Japan.
K. Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
M. Orita
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
M. Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
Y. Ikuhara
Affiliation:
Engineering Research Institute, University of Tokyo, 2–11–16 Yayoi, Bunkyo, Tokyo 113–8656, Japan.
H. Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
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Abstract

We have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V2.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Bednortz, J. G. and Muller, K. A., Z. Phys. B64, 189 (1986).Google Scholar
2. Wu, M. K. et al., Phys. Rev. Lett. 58, 908 (1987).Google Scholar
3. Kitamura, T., Yoshida, M., Yamada, Y., Shiohara, Y., Hirabayashi, I. and Tanaka, S., Appl. Phys. Lett. 66, 1421 (1995).Google Scholar
4. Yoshida, Y., Ito, Y., Hirabayashi, I., Nagai, N., and Takai, Y., Appl. Phys. Lett. 69, 845 (1996).Google Scholar
5. Chandrasekhar, N. and Schlom, D. G., Physica C 235–240, 697 (1994).Google Scholar
6. Sunshine, S. A. et al. Phys. Rev. B38, 893 (1988).Google Scholar
7. GaO, Y. et al., Science 241, 954 (1988).Google Scholar
8. Yamaguchi, T., Ueda, F. and Imamura, M., Jpn. J. Appl. Phys., Part 1 32, 1634 (1993).Google Scholar
9. Kasper, H., Z. Anorg. Allg. Chem. 349, 113 (1967).Google Scholar
10. Kimizuka, N. and Takayama, E., J. Solid State Chem. 40, 109 (1981).Google Scholar
11. Cannard, P. J. and Tilley, R. J. D., J. Solid State Chem. 73, 418 (1988).Google Scholar
12. Kimizuka, N., Mohri, T. and Nakamura, M., J. Solid State Chem. 81, 70 (1989).Google Scholar
13. Kimizuka, N., Isobe, M., Nakamura, M. and Mohri, T., J. Solid State Chem. 103, 394 (1993).Google Scholar
14. Isobe, M., Kimizuka, N., Nakamura, M. and Mohri, T., Acta Cryst. C50, 332 (1994).Google Scholar
15. Li, C., Bando, Y., Nakamura, M., Onoda, M. and Kimizuka, N., J. Solid State Chem. 139, 347 (1998).Google Scholar
16. Pitschke, W. and Koumoto, K., Powder Diffr. 14, 213 (1999).Google Scholar
17. Phillips, J. W., Cava, R. J., Thomas, G. A., Cater, S. A., Kwo, J., Siegrist, T., Krajewski, J. J., Marchall, J. H., Peak, W. F. Jr, and Papkine, D. H., Appl. Phys. Lett. 67, 2246 (1995).Google Scholar
18. Hiramatsu, H., Seo, W. S. and Koumoto, K., Chem. Mater. 10, 3033 (1998).Google Scholar
19. Naghavi, N., Rougier, A., Marcet, C., Guery, C., Leriche, J. B. and Trascon, J. M., Thin Solid Films 360, 233 (2000).Google Scholar
20. Ohta, H., Seo, W. S. and Koumoto, K., J. Am. Ceram. Soc. 79, 2193 (1996).Google Scholar
21. Vossen, J. L. and Kern, W., Thin Film Processes (Academic Press, New York, 1978).Google Scholar
22. Bunshah, R. F., Deposition Technologies for Films and Coatings, Developments and Applications (Noyes Publications, 1982).Google Scholar
23. Suntola, T. and Simpson, M., Atomic Layer Epitaxy (Chapman and Hall, New York, 1990).Google Scholar
24. Chrisey, D. B. and Hubler, G. K., Pulsed Laser Deposition of Thin Films (John Wiley & Sons, Inc, New York, 1994).Google Scholar
25. Yun, K. S., Choi, B. D., Matsumoto, Y., Song, J. H., Kanda, N., Itoh, T., Kawasaki, M., Chikyow, T. and Ahmet, P. and Koinuma, H., Appl. Phys. Lett. 80, 61 (2002).Google Scholar
26. Ohta, H., Tanji, H., Orita, M., Hosono, H. and Kawazoe, H., Mater. Res. Soc. Symp. Proc. 570, 309 (1999).Google Scholar
27. Orita, M., Ohta, H., Hirano, M., Narushima, S. and Hosono, H., Philo. Mag. B81, 501 (2001).Google Scholar
28. Ohashi, N., Sakaguchi, I., Hishita, S., Adachi, Y., Haneda, H. and Ogino, T., J. Appl. Phys. 92, 2378 (2002).Google Scholar
29. Nomura, K., Ohta, H., Ueda, K., Orita, M., Hirano, M. and Hosono, H., Thin Solid Films 411, 147 (2002).Google Scholar
30. Hiramatsu, H., Ueda, K., Ohta, H., Orita, M., Hirano, M. and Hosono, H., Appl. Phys. Lett. 81, 598 (2002).Google Scholar
31. Ohta, H., Kawamura, K., Orita, M., Hirano, M., Sarukura, N. and Hosono, H., Appl. Phys. Lett. 77, 475 (2000).Google Scholar
32. Ohta, H., Orita, M., Hirano, M. and Hosono, H., J. Appl. Phys. 91, 3547 (2002).Google Scholar
33. Orita, M., Ohta, H., Hiramatsu, H., Hirano, M., Den, S., Sasaki, M., Katagiri, T., Mimura, H. and Hosono, H., Rev. Sci. Instrum. 72, 3340 (2001).Google Scholar
34. Kiessig, H., Annalen der Physik 10, 771 (1931).Google Scholar