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Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

Published online by Cambridge University Press:  01 February 2011

Matthew R. Wills ,
Ruth Shinar  and
Alan P. Constant
Matthew R. Wills
Affiliation:
Department of Materials Science and Engineering
Ruth Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa 50011
Alan P. Constant
Affiliation:
Department of Materials Science and Engineering
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Abstract

Pulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.11
Copyright
Copyright © Materials Research Society 2003

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