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Reactive Ion Etching of In-Based III-V Semiconductors -Comparison of Cl and C2H6 Chemistries

Published online by Cambridge University Press:  21 February 2011

S. J. Pearton ,
U. K. Chakrabarti ,
F. A. Baiocchi  and
W. S. Hobson
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
U. K. Chakrabarti
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. A. Baiocchi
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The reactive ion etching of InP, InGaAs and InAlAs in CC12F2 /O 2 or C2H6 /H 2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate and relative composition. The etch rates of these materials are a factor of 3-5 times faster in CC12F2 /O 2 (∼600–1000 Å · min−1) compared to C2H6 /H 2(160–320 Å · min−1). Significantly smoother morphologies are obtained with C2H6 /H 2 etching provided the composition of the plasma is no more than 10 - 20% by volume of C2H6. At higher methane compositions, polymer formation increases leading to micromasking and rough surface morphologies. Sub-surface disorder is limited to <100 Å deep for both gas chemistries for plasma power densities of 0.85 W cm−2. The C2H6 /H 2 mixture leaves an In-rich surface in all cases, but this surface is free of any residual contamination, whereas the CC12F2/O2 chemistry leaves chloro-fluorocarbon residues approximately 20–50 Å thick on the surface of all three In-based materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 417
Copyright
Copyright © Materials Research Society 1990

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References

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