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Reactive Ion Etching of CVD Diamond in CF4/O2, O2 and O2/Ar Plasmas

Published online by Cambridge University Press:  15 March 2011

Patrick W. Leech ,
Geoffrey K. Reeves  and
Anthony S. Holland
Patrick W. Leech
Affiliation:
CSIRO Division of Manufacturing Science and Technology, 3169, Victoria, Australia
Geoffrey K. Reeves
Affiliation:
Dept. of Communication and Electronic Engineering, R.M.I.T. University, Victoria, Australia
Anthony S. Holland
Affiliation:
Dept. of Communication and Electronic Engineering, R.M.I.T. University, Victoria, Australia
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Abstract

The reactive ion etching of diamond in O2, CF4/O2, CHF3/O2, O2/Ar) discharges has been examined as a function of bias voltage, flow rate and composition of the gas mixtures. Etching in O2 and O2/Ar plasmas (with flow ratio of O2/Ar >25% ) was characterised by a high etch rate (∼35 nm/min) and an increase in surface roughness with rising bias voltage. The CF4/O2 plasmas also produced a high etch rate (∼50 nm/min) but with only minor dependence of roughness on bias voltage. In comparison, the O2/Ar (with O2/Ar flow ratio <25%) and CHF3/O2 plasmas resulted in a low etch rate (7-10 nm/min). The high and low rate regimes were identified as ion- enhanced chemical etching and physical sputtering respectively. Etching in the O2/Ar plasmas has been attributed to a combination of the two processes dependent on the O2 content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.36.1
Copyright
Copyright © Materials Research Society 2000

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