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Reactive Ion Etching and Lithographic Characterization of a New Organosilicon Resist

Published online by Cambridge University Press:  25 February 2011

R. G. Tarascon ,
A. Shugard  and
E. Reichmanis
R. G. Tarascon
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Shugard
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
E. Reichmanis
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We describe the use of a novel organosilicon novolac as a base resin component of bi-level resist systems for both photo and electron-beam lithography. The lithographic evaluation of the new material demonstrates submicron resolution and high aspect ratio images with little linewidth loss after reactive ion etching (RIE). The optimization of the RIE conditions will be also discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 347
Copyright
Copyright © Materials Research Society 1987

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References

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